Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC

G. David; K. Yang; M. Crites; J. S. Rieh; L. H. Lu; P. Bhattacharya; L. P.B. Katehi; J. F. Whitaker

doi:10.1109/SMIC.1998.750219

Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC

G. David, K. Yang, M. Crites, J. S. Rieh, L. H. Lu, P. Bhattacharya, L. P.B. Katehi, J. F. Whitaker

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.

Original language	English
Title of host publication	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Editors	Sammy Kayali
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	187-191
Number of pages	5
ISBN (Electronic)	0780352882, 9780780352889
DOIs	https://doi.org/10.1109/SMIC.1998.750219
Publication status	Published - 1998
Externally published	Yes
Event	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sep 18 → 1998 Sep 18

Publication series

Name	1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
Volume	1998-September

Other

Other	1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998
Country/Territory	United States
City	Ann Arbor
Period	98/9/18 → 98/9/18

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Instrumentation

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10.1109/SMIC.1998.750219

Cite this

David, G., Yang, K., Crites, M., Rieh, J. S., Lu, L. H., Bhattacharya, P., Katehi, L. P. B., & Whitaker, J. F. (1998). Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC. In S. Kayali (Ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 (pp. 187-191). [750219] (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/SMIC.1998.750219

Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC. / David, G.; Yang, K.; Crites, M. et al.

1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 1998. p. 187-191 750219 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998; Vol. 1998-September).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

David, G, Yang, K, Crites, M, Rieh, JS, Lu, LH, Bhattacharya, P, Katehi, LPB & Whitaker, JF 1998, Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC. in S Kayali (ed.), 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998., 750219, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998, vol. 1998-September, Institute of Electrical and Electronics Engineers Inc., pp. 187-191, 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998, Ann Arbor, United States, 98/9/18. https://doi.org/10.1109/SMIC.1998.750219

David G, Yang K, Crites M, Rieh JS, Lu LH, Bhattacharya P et al. Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC. In Kayali S, editor, 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 187-191. 750219. (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998). https://doi.org/10.1109/SMIC.1998.750219

David, G. ; Yang, K. ; Crites, M. et al. / Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC. 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. editor / Sammy Kayali. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 187-191 (1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998).

@inproceedings{326bb7c2fc9644db8d19505830414aad,

title = "Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC",

abstract = "Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.",

author = "G. David and K. Yang and M. Crites and Rieh, {J. S.} and Lu, {L. H.} and P. Bhattacharya and Katehi, {L. P.B.} and Whitaker, {J. F.}",

note = "Funding Information: This work has been funded by the MUM project on “Power Combining Systems” under contract: DAAG 55-97-0132, by the Air Force Ofice of Scientific Research, Air Force Materiel Command, USAF, under grant no. F496.20-98-I-0365, and by the NSF Center for Ultrafast Optical Science under STC PHY 8920108. G. David was supported by a Feodor-Lynen Fellowship of the Alexander von Humboldt-Foundation, Germany Publisher Copyright: {\textcopyright} 1998 IEEE.; 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 ; Conference date: 18-09-1998 Through 18-09-1998",

year = "1998",

doi = "10.1109/SMIC.1998.750219",

language = "English",

series = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "187--191",

editor = "Sammy Kayali",

booktitle = "1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998",

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T1 - Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC

AU - David, G.

AU - Yang, K.

AU - Crites, M.

AU - Rieh, J. S.

AU - Lu, L. H.

AU - Bhattacharya, P.

AU - Katehi, L. P.B.

AU - Whitaker, J. F.

N1 - Funding Information: This work has been funded by the MUM project on “Power Combining Systems” under contract: DAAG 55-97-0132, by the Air Force Ofice of Scientific Research, Air Force Materiel Command, USAF, under grant no. F496.20-98-I-0365, and by the NSF Center for Ultrafast Optical Science under STC PHY 8920108. G. David was supported by a Feodor-Lynen Fellowship of the Alexander von Humboldt-Foundation, Germany Publisher Copyright: © 1998 IEEE.

PY - 1998

Y1 - 1998

N2 - Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.

AB - Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.

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M3 - Conference contribution

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T3 - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

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BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998

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PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998

Y2 - 18 September 1998 through 18 September 1998

ER -

Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC

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