Abstract
Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.
| Original language | English |
|---|---|
| Title of host publication | 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998 |
| Editors | Sammy Kayali |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 187-191 |
| Number of pages | 5 |
| Volume | 1998-September |
| ISBN (Electronic) | 0780352882, 9780780352889 |
| DOIs | |
| Publication status | Published - 1998 Jan 1 |
| Externally published | Yes |
| Event | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 - Ann Arbor, United States Duration: 1998 Sep 18 → 1998 Sep 18 |
Other
| Other | 1st Topical Meeting on Silicon Mono1ithic Integrated Circuits in RF Systems, SiRF 1998 |
|---|---|
| Country | United States |
| City | Ann Arbor |
| Period | 98/9/18 → 98/9/18 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Instrumentation
Cite this
Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC. / David, G.; Yang, K.; Crites, M.; Rieh, Jae-Sung; Lu, L. H.; Bhattacharya, P.; Katehi, L. P.B.; Whitaker, J. F.
1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998. ed. / Sammy Kayali. Vol. 1998-September Institute of Electrical and Electronics Engineers Inc., 1998. p. 187-191 750219.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Photoconductive probing and computer simulation of microwave potentials inside a SiGe MMIC
AU - David, G.
AU - Yang, K.
AU - Crites, M.
AU - Rieh, Jae-Sung
AU - Lu, L. H.
AU - Bhattacharya, P.
AU - Katehi, L. P.B.
AU - Whitaker, J. F.
PY - 1998/1/1
Y1 - 1998/1/1
N2 - Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.
AB - Electrical potentials inside a SiGe MMIC are measured at frequencies up to 20 GHz using a micro-machined photoconductive sampling probe and compared with values predicted using microwave CAD software. The results illustrate that this combination of simulation and in-circuit measurement technique is a powerful tool for performing diagnostics of the microwave performance of Si-based RF circuits. The methodology can be used for applications such as fault isolation and validation of device models, as well as for investigation of the sensitivity of performance to process variations.
UR - http://www.scopus.com/inward/record.url?scp=84884210404&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84884210404&partnerID=8YFLogxK
U2 - 10.1109/SMIC.1998.750219
DO - 10.1109/SMIC.1998.750219
M3 - Conference contribution
AN - SCOPUS:84884210404
VL - 1998-September
SP - 187
EP - 191
BT - 1998 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems, SiRF 1998
A2 - Kayali, Sammy
PB - Institute of Electrical and Electronics Engineers Inc.
ER -