Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method

Sukhyung Park, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

Abstract

In this study, pn heterojunction diodes are constructed with p-type HgTe nanoparticle (NP) films dropped by a nanoplotter and n-type Si nanowires (NWs) transferred onto plastic substrates and their optoelectronic characteristics are investigated under the illumination of 633-nm wavelength light. The rectification ratio when light is irradiated on the diode is twice that in the dark. The photocurrent efficiency of the diode at a bias voltage of 2.5 V is determined to be 0.41 μA/W, which is greater than that of the transferred Si NWs.

Original languageEnglish
Pages (from-to)3539-3541
Number of pages3
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2013 May 1

Fingerprint

Nanowires
Photocurrents
Nanoparticles
photocurrents
Heterojunctions
heterojunctions
Diodes
nanowires
diodes
Light
nanoparticles
Lighting
Plastics
rectification
Bias voltage
Optoelectronic devices
plastics
illumination
Wavelength
electric potential

Keywords

  • Nanoparticle
  • Photocurrent
  • Pn heterojunction
  • Silicon nanowire

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

Cite this

Photocurrent characteristics of HgTe nanoparticle films-Si nanowires heterojunctions made using a simple transfer-dropping method. / Park, Sukhyung; Cho, Kyoungah; Kim, Sangsig.

In: Journal of Nanoscience and Nanotechnology, Vol. 13, No. 5, 01.05.2013, p. 3539-3541.

Research output: Contribution to journalArticle

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