Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 νm wavelength light

Hojun Seong, Kyoungah Cho, Sangsig Kim

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 νm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 νA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.

Original languageEnglish
Article number075011
JournalSemiconductor Science and Technology
Volume23
Issue number7
DOIs
Publication statusPublished - 2008 Jul 1

Fingerprint

Photocurrents
photocurrents
Lighting
illumination
Nanoparticles
Thin films
Wavelength
nanoparticles
thin films
wavelengths
Glass
glass
Electric potential
electric potential
Substrates

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 νm wavelength light. / Seong, Hojun; Cho, Kyoungah; Kim, Sangsig.

In: Semiconductor Science and Technology, Vol. 23, No. 7, 075011, 01.07.2008.

Research output: Contribution to journalArticle

@article{e8fe5445e0a840258f9391eb7dd81b0c,
title = "Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 νm wavelength light",
abstract = "The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 νm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 νA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.",
author = "Hojun Seong and Kyoungah Cho and Sangsig Kim",
year = "2008",
month = "7",
day = "1",
doi = "10.1088/0268-1242/23/7/075011",
language = "English",
volume = "23",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "7",

}

TY - JOUR

T1 - Photocurrent characteristics of solution-processed HgTe nanoparticle thin films under the illumination of 1.3 νm wavelength light

AU - Seong, Hojun

AU - Cho, Kyoungah

AU - Kim, Sangsig

PY - 2008/7/1

Y1 - 2008/7/1

N2 - The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 νm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 νA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.

AB - The photocurrent characteristics of HgTe nanoparticle (NP) thin films fabricated on glass substrates were investigated under the illumination of 1.3 νm wavelength light in this work. The photocurrent obtained from an NP thin film with a vertical structure was 119 νA in magnitude at an applied voltage of 2 V. The magnitude of the photocurrent for an NP thin film with a lateral structure was 23.8 nA at 10 V. Nevertheless, the relative magnitude of the photocurrent measured as a function of the chopping frequency was largely the same for the thin films with both the lateral and the vertical structures. The frequency-dependent photocurrent mechanism of the NP thin films will be discussed in detail in this paper.

UR - http://www.scopus.com/inward/record.url?scp=47749114966&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=47749114966&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/23/7/075011

DO - 10.1088/0268-1242/23/7/075011

M3 - Article

AN - SCOPUS:47749114966

VL - 23

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 7

M1 - 075011

ER -