TY - GEN
T1 - Photocurrent generation mechanism in GeS nanosheet phototransistor
AU - Moon, Young Sun
AU - Lee, Kook Jin
AU - Kim, Gyu Tae
N1 - Funding Information:
This research was supported by the MSIT(Ministry of Science and ICT), Korea, under the ITRC(Information Technology Research Center) support program(IITP-2018-2015-0-00385) supervised by the IITP(Institute for Information & communications Technology Promotion)
Publisher Copyright:
© 2018 IEEE.
PY - 2018/11/16
Y1 - 2018/11/16
N2 - Photoresponsivity and photocurrent according to gate voltages and various light power of 532nm laser in Germanium sulfide (GeS) phototransistor, which is noticed for its high photoresponsivity, is observed. The experimental result of photocurrent by light power was fitted with power function, and the exponent was used as a key parameter for speculation of photocurrent generation mechanisms. When the transistor is on, the photogating effect was considered as a main mechanism of photocurrent generation. There are two causes for photogating effect; One is a gating effect from captured carriers on trap state, and the other is from keeping charge neutrality resulting from the difference of electron and hole mobilities. And when the transistor is off, even though there is also a photogating effect, photocurrent from photoconduction effect is a dominant mechanism.
AB - Photoresponsivity and photocurrent according to gate voltages and various light power of 532nm laser in Germanium sulfide (GeS) phototransistor, which is noticed for its high photoresponsivity, is observed. The experimental result of photocurrent by light power was fitted with power function, and the exponent was used as a key parameter for speculation of photocurrent generation mechanisms. When the transistor is on, the photogating effect was considered as a main mechanism of photocurrent generation. There are two causes for photogating effect; One is a gating effect from captured carriers on trap state, and the other is from keeping charge neutrality resulting from the difference of electron and hole mobilities. And when the transistor is off, even though there is also a photogating effect, photocurrent from photoconduction effect is a dominant mechanism.
UR - http://www.scopus.com/inward/record.url?scp=85059449105&partnerID=8YFLogxK
U2 - 10.1109/ICTC.2018.8539678
DO - 10.1109/ICTC.2018.8539678
M3 - Conference contribution
AN - SCOPUS:85059449105
T3 - 9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018
SP - 733
EP - 735
BT - 9th International Conference on Information and Communication Technology Convergence
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 9th International Conference on Information and Communication Technology Convergence, ICTC 2018
Y2 - 17 October 2018 through 19 October 2018
ER -