Photocurrent generation mechanism in GeS nanosheet phototransistor

Young Sun Moon, Kook Jin Lee, Gyu-Tae Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Photoresponsivity and photocurrent according to gate voltages and various light power of 532nm laser in Germanium sulfide (GeS) phototransistor, which is noticed for its high photoresponsivity, is observed. The experimental result of photocurrent by light power was fitted with power function, and the exponent was used as a key parameter for speculation of photocurrent generation mechanisms. When the transistor is on, the photogating effect was considered as a main mechanism of photocurrent generation. There are two causes for photogating effect; One is a gating effect from captured carriers on trap state, and the other is from keeping charge neutrality resulting from the difference of electron and hole mobilities. And when the transistor is off, even though there is also a photogating effect, photocurrent from photoconduction effect is a dominant mechanism.

Original languageEnglish
Title of host publication9th International Conference on Information and Communication Technology Convergence
Subtitle of host publicationICT Convergence Powered by Smart Intelligence, ICTC 2018
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages733-735
Number of pages3
ISBN (Electronic)9781538650400
DOIs
Publication statusPublished - 2018 Nov 16
Event9th International Conference on Information and Communication Technology Convergence, ICTC 2018 - Jeju Island, Korea, Republic of
Duration: 2018 Oct 172018 Oct 19

Publication series

Name9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018

Other

Other9th International Conference on Information and Communication Technology Convergence, ICTC 2018
CountryKorea, Republic of
CityJeju Island
Period18/10/1718/10/19

Fingerprint

Phototransistors
Nanosheets
Photocurrents
Germanium
Transistors
Hole mobility
Electron mobility
Sulfides
Lasers
Electric potential

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Computer Science Applications
  • Information Systems
  • Information Systems and Management
  • Artificial Intelligence

Cite this

Moon, Y. S., Lee, K. J., & Kim, G-T. (2018). Photocurrent generation mechanism in GeS nanosheet phototransistor. In 9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018 (pp. 733-735). [8539678] (9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ICTC.2018.8539678

Photocurrent generation mechanism in GeS nanosheet phototransistor. / Moon, Young Sun; Lee, Kook Jin; Kim, Gyu-Tae.

9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 733-735 8539678 (9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Moon, YS, Lee, KJ & Kim, G-T 2018, Photocurrent generation mechanism in GeS nanosheet phototransistor. in 9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018., 8539678, 9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018, Institute of Electrical and Electronics Engineers Inc., pp. 733-735, 9th International Conference on Information and Communication Technology Convergence, ICTC 2018, Jeju Island, Korea, Republic of, 18/10/17. https://doi.org/10.1109/ICTC.2018.8539678
Moon YS, Lee KJ, Kim G-T. Photocurrent generation mechanism in GeS nanosheet phototransistor. In 9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 733-735. 8539678. (9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018). https://doi.org/10.1109/ICTC.2018.8539678
Moon, Young Sun ; Lee, Kook Jin ; Kim, Gyu-Tae. / Photocurrent generation mechanism in GeS nanosheet phototransistor. 9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 733-735 (9th International Conference on Information and Communication Technology Convergence: ICT Convergence Powered by Smart Intelligence, ICTC 2018).
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