Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition

Kyung Hwan Kim, Kihyun Keem, Dong Young Jeong, Byungdon Min, Kyoungah Cho, Hyunsuk Kim, Byung Moo Moon, Taeyong Noh, Jucheol Park, Minchul Suh, Sangsig Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition is investigated in this study. For an undoped Si nanowire biased at 3 V, photocurrent excited by the 633-nm wavelength light is stronger in intensity than that excited by the 325-nm wavelength light, and photoresponses are rapid when the light is switched on and off. In contrast, for the n- and p-type Si nanowires, photocurrent excited by the 633-nm wavelength light is not measurable, although one excited by 325-nm wavelength light is still detectable. And photoresponses obtained for the doped Si nanowires are slower, compared with the undoped Si nanowire. Photocurrent phenomena observed in the undoped, n- and p-type Si nanowires are discussed in this paper.

Original languageEnglish
Pages (from-to)4265-4269
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 A
DOIs
Publication statusPublished - 2006 May 9

Keywords

  • Photocurrent
  • Si nanowires
  • Undoped
  • n-type
  • p-type

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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