Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition

Kyung Hwan Kim, Kihyun Keem, Dong Young Jeong, Byungdon Min, Kyoungah Cho, Hyunsuk Kim, Byung-Moo Moon, Taeyong Noh, Jucheol Park, Minchul Suh, Sangsig Kim

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition is investigated in this study. For an undoped Si nanowire biased at 3 V, photocurrent excited by the 633-nm wavelength light is stronger in intensity than that excited by the 325-nm wavelength light, and photoresponses are rapid when the light is switched on and off. In contrast, for the n- and p-type Si nanowires, photocurrent excited by the 633-nm wavelength light is not measurable, although one excited by 325-nm wavelength light is still detectable. And photoresponses obtained for the doped Si nanowires are slower, compared with the undoped Si nanowire. Photocurrent phenomena observed in the undoped, n- and p-type Si nanowires are discussed in this paper.

Original languageEnglish
Pages (from-to)4265-4269
Number of pages5
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume45
Issue number5 A
DOIs
Publication statusPublished - 2006 May 9

Keywords

  • n-type
  • p-type
  • Photocurrent
  • Si nanowires
  • Undoped

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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