Photocurrent spectroscopy of single wurtzite GaAs nanowires

D. C. Kim, L. Ahtapodov, A. B. Boe, J. W. Choi, H. Ji, G. T. Kim, A. F. Moses, D. L. Dheeraj, B. O. Fimland, H. Weman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)

Abstract

Photocurrent of single wurtzite GaAs nanowires grown by Au-assisted molecular beam epitaxy is measured at room and low temperature (10 K). At room temperature a high photo-response with more than two orders of magnitude increase of current is observed. The wavelength dependence of the photocurrent shows a sharp change near the zinc blende GaAs band gap. The absence of the free exciton peak in the low temperature photocurrent spectrum, and problems related to determining the exact position of the energy bandgap of wurtzite GaAs from the observed data are discussed.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages429-430
Number of pages2
DOIs
Publication statusPublished - 2011
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Keywords

  • GaAs
  • Photocurrent
  • nanowire
  • wurtzite

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Kim, D. C., Ahtapodov, L., Boe, A. B., Choi, J. W., Ji, H., Kim, G. T., Moses, A. F., Dheeraj, D. L., Fimland, B. O., & Weman, H. (2011). Photocurrent spectroscopy of single wurtzite GaAs nanowires. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 429-430). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666437