Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films

Haeseok Lee, Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, Takeshi Ohshima, Hisayoshi Itoh

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The photoelectromagnetic effects on electron and proton irradiated CuInSe2 (CIS) thin films were investigated by using radio frequency sputtering method. The damage constant was estimated from the change in diffusion length before and after irradiation. It was found that the diffusion length decreased due to irradiation-induced defects when the electron fluence exceeded 1×1016cm-2.

Original languageEnglish
Pages (from-to)276-278
Number of pages3
JournalJournal of Applied Physics
Volume94
Issue number1
DOIs
Publication statusPublished - 2003 Jul 1
Externally publishedYes

Fingerprint

photoelectromagnetic effects
diffusion length
irradiation
protons
thin films
radio frequencies
fluence
electrons
sputtering
damage
defects

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films. / Lee, Haeseok; Okada, Hiroshi; Wakahara, Akihiro; Yoshida, Akira; Ohshima, Takeshi; Itoh, Hisayoshi.

In: Journal of Applied Physics, Vol. 94, No. 1, 01.07.2003, p. 276-278.

Research output: Contribution to journalArticle

Lee, H, Okada, H, Wakahara, A, Yoshida, A, Ohshima, T & Itoh, H 2003, 'Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films', Journal of Applied Physics, vol. 94, no. 1, pp. 276-278. https://doi.org/10.1063/1.1579545
Lee, Haeseok ; Okada, Hiroshi ; Wakahara, Akihiro ; Yoshida, Akira ; Ohshima, Takeshi ; Itoh, Hisayoshi. / Photoelectromagnetic effects on electron and proton irradiated CuInSe2 thin films. In: Journal of Applied Physics. 2003 ; Vol. 94, No. 1. pp. 276-278.
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