Photogating effects of HgTe nanoparticles on a single ZnO nanowire

Seong Hojun, Cho Kyoungah, Yun Junggwon, Kwak Kiyeol, Jun Jin Hyung, Sangsig Kim

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

In this study, we demonstrate the photogating effects of p-type HgTe nanoparticles (NPs) on an n-type ZnO nanowire (NW). The photogating effects are due to the charge separation of the charge carriers photogenerated in the NPs under illumination and the subsequent accumulation of the photogenerated electrons in the pn junction of the NPs and the NW. The presence of the electrons in the junction reduces the current in the ZnO NW. The photogating effects are proved by the different photocurrent behavior of the ZnO NW to which the HgTe NPs are attached from that of a bare ZnO NW. In addition, the dependence of the photogating effects on the power of the incident light is discussed.

Original languageEnglish
Pages (from-to)1328-1331
Number of pages4
JournalSolid State Sciences
Volume12
Issue number8
DOIs
Publication statusPublished - 2010 Aug 1

Fingerprint

Nanowires
nanowires
Nanoparticles
nanoparticles
Electrons
polarization (charge separation)
Charge carriers
Photocurrents
photocurrents
charge carriers
electrons
Lighting
illumination

Keywords

  • Compound semiconductors
  • Electro-optical effects
  • Nanocrystalline materials
  • Optical materials

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Photogating effects of HgTe nanoparticles on a single ZnO nanowire. / Hojun, Seong; Kyoungah, Cho; Junggwon, Yun; Kiyeol, Kwak; Hyung, Jun Jin; Kim, Sangsig.

In: Solid State Sciences, Vol. 12, No. 8, 01.08.2010, p. 1328-1331.

Research output: Contribution to journalArticle

Hojun, Seong ; Kyoungah, Cho ; Junggwon, Yun ; Kiyeol, Kwak ; Hyung, Jun Jin ; Kim, Sangsig. / Photogating effects of HgTe nanoparticles on a single ZnO nanowire. In: Solid State Sciences. 2010 ; Vol. 12, No. 8. pp. 1328-1331.
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