Photoinduced characteristics of organic thin film transistor using π-conjugated dendrimer

M. Y. Cho, H. S. Kang, S. J. Kim, J. Joo, K. H. Kim, M. J. Cho, D. H. Choi

Research output: Contribution to conferencePaper

Abstract

We fabricated OTFT device using soluble π-conjugated dendrimer, 4(HPBT)-benzene, and investigated photoinduced characteristics of the device. The OTFT device using 4(HPBT)-benzene as an active layer showed a carrier mobility as high as 6×10-3 cm2/Vs in dark conditions and sensitive photoinduced characteristics even at low light intensity. We observed the shift of threshold voltage and saturation current in photoinduced field-effect transistor characteristic curves. Through the measurements of the photoinduced saturation current as a function of drain voltages, we estimated photoinduced charge density of the OTFT.

Original languageEnglish
Pages1825-1827
Number of pages3
Publication statusPublished - 2007 Dec 1
Event14th International Display Workshops, IDW '07 - Sapporo, Japan
Duration: 2007 Dec 52007 Dec 5

Other

Other14th International Display Workshops, IDW '07
CountryJapan
CitySapporo
Period07/12/507/12/5

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Radiology Nuclear Medicine and imaging
  • Atomic and Molecular Physics, and Optics

Cite this

Cho, M. Y., Kang, H. S., Kim, S. J., Joo, J., Kim, K. H., Cho, M. J., & Choi, D. H. (2007). Photoinduced characteristics of organic thin film transistor using π-conjugated dendrimer. 1825-1827. Paper presented at 14th International Display Workshops, IDW '07, Sapporo, Japan.