Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films

Jun Hong Noh, In Sun Cho, Sangwook Lee, Chin Moo Cho, Hyun Soo Han, Jae Sul An, Chae Hyun Kwak, Jin Yong Kim, Hyun Suk Jung, Jung Kun Lee, Kug Sun Hong

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14 Citations (Scopus)

Abstract

Epitaxial ZnO and Al-doped ZnO (AZO) thin films were grown on (0001)-sapphire substrates using pulsed laser deposition. The photoluminescence spectrum of the highly conductive (1.3×10 3 S cm -1), as-grown AZO shows a poor near band edge (NBE) emission (3.30 eV) and no deep level emission at room temperature. In addition, the peak (3.386 eV) for the free excitons of AZO showed thermal quenching behavior with two activation energies (38.2 and 10.0 meV). The poor NBE emission is attributed to the nonradiative recombination center created by Al doping. Highly conductive (6.0×10 2 S cm -1) and intense NBE emitting AZO films could be achieved by the reduction of the nonradiative recombination centers through hydrogen annealing.

Original languageEnglish
Pages (from-to)2133-2138
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume206
Issue number9
DOIs
Publication statusPublished - 2009 Sep 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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    Noh, J. H., Cho, I. S., Lee, S., Cho, C. M., Han, H. S., An, J. S., Kwak, C. H., Kim, J. Y., Jung, H. S., Lee, J. K., & Hong, K. S. (2009). Photoluminescence and electrical properties of epitaxial Al-doped ZnO transparent conducting thin films. Physica Status Solidi (A) Applications and Materials Science, 206(9), 2133-2138. https://doi.org/10.1002/pssa.200881790