Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon

Lee Woon Jang, Dae Woo Jeon, Ju Won Jeon, Myoung Kim, Min Kyu Kim, A. Y. Polyakov, Jin Woo Ju, Seung Jae Lee, Jong Hyeob Baek, Mun Seok Jeong, Yong Hwan Kim, In Hwan Lee

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4 Citations (Scopus)

Abstract

Photoluminescence (PL) efficiency enhancement produced by deposition of Ag/SiO 2 coreshell nanoparticles (NPs) on the GaNInGaN multi-quantum well structure was studied as a function of quantum well (QW) number in the structure. For back-surface laser excitation the strongest PL enhancement by 1.5 times was observed for single QW structure, the weakest for the 5QW structure. The result is ascribed to Ag/SiO 2 NPs localized surface plasmons coupling to the MQW region and the dependence of the coupling efficiency on the distance to the NP layer. Simple modeling suggests that the coupling efficiency starts to decrease for distances higher than about 50 nm.

Original languageEnglish
Pages (from-to)H522-H524
JournalJournal of the Electrochemical Society
Volume159
Issue number5
DOIs
Publication statusPublished - 2012

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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    Jang, L. W., Jeon, D. W., Jeon, J. W., Kim, M., Kim, M. K., Polyakov, A. Y., Ju, J. W., Lee, S. J., Baek, J. H., Jeong, M. S., Kim, Y. H., & Lee, I. H. (2012). Photoluminescence enhancement in GaNInGaN multi-quantum well structures as a function of quantum well numbers: Coupling behaviors of localized surface plasmon. Journal of the Electrochemical Society, 159(5), H522-H524. https://doi.org/10.1149/2.097205jes