Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide

Jung H. Shin, Se Young Seo, Sangsig Kim, S. G. Bishop

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

The 1.54 μm Er3+ photoluminescence excitation (PLE) and photoluminescence (PL) spectra of erbium-doped silicon-rich silicon oxide (SRSO) are investigated. Between 350 and 820 nm, PLE spectra are broad and featureless, and the PL spectra are independent of the excitation wavelengths. The results indicate that in erbium-doped SRSO, the Er3+ luminescence is dominated by a single class of Er sites with a strong coupling to all the carriers in the silicon nanograins.

Original languageEnglish
Pages (from-to)1999-2001
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number15
Publication statusPublished - 2000 Apr 10

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silicon oxides
erbium
photoluminescence
silicon
spectroscopy
excitation
luminescence
wavelengths

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide. / Shin, Jung H.; Seo, Se Young; Kim, Sangsig; Bishop, S. G.

In: Applied Physics Letters, Vol. 76, No. 15, 10.04.2000, p. 1999-2001.

Research output: Contribution to journalArticle

Shin, Jung H. ; Seo, Se Young ; Kim, Sangsig ; Bishop, S. G. / Photoluminescence excitation spectroscopy of erbium-doped silicon-rich silicon oxide. In: Applied Physics Letters. 2000 ; Vol. 76, No. 15. pp. 1999-2001.
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