Photoluminescence from wurtzite GaN under hydrostatic pressure

Sangsig Kim, Irving P. Herman, J. A. Tuchman, K. Doverspike, L. B. Rowland, D. K. Gaskill

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Abstract

The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the"yellow" band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K.

Original languageEnglish
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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    Kim, S., Herman, I. P., Tuchman, J. A., Doverspike, K., Rowland, L. B., & Gaskill, D. K. (1995). Photoluminescence from wurtzite GaN under hydrostatic pressure. Applied Physics Letters, 67. https://doi.org/10.1063/1.114635