Photoluminescence from wurtzite GaN under hydrostatic pressure

Sangsig Kim; Irving P. Herman; J. A. Tuchman; K. Doverspike; L. B. Rowland; D. K. Gaskill

doi:10.1063/1.114635

Photoluminescence from wurtzite GaN under hydrostatic pressure

Sangsig Kim, Irving P. Herman, J. A. Tuchman, K. Doverspike, L. B. Rowland, D. K. Gaskill

Research output: Contribution to journal › Article › peer-review

53 Citations (Scopus)

Abstract

The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I₂ exciton recombination line and the"yellow" band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I₂ lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K.

Original language	English
Pages (from-to)	380
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114635
Publication status	Published - 1995
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.114635

Cite this

@article{aa2c18c69c80487a88b5f4baa59409bd,

title = "Photoluminescence from wurtzite GaN under hydrostatic pressure",

abstract = "The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the{"}yellow{"} band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K.",

author = "Sangsig Kim and Herman, {Irving P.} and Tuchman, {J. A.} and K. Doverspike and Rowland, {L. B.} and Gaskill, {D. K.}",

year = "1995",

doi = "10.1063/1.114635",

language = "English",

volume = "67",

pages = "380",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Photoluminescence from wurtzite GaN under hydrostatic pressure

AU - Kim, Sangsig

AU - Herman, Irving P.

AU - Tuchman, J. A.

AU - Doverspike, K.

AU - Rowland, L. B.

AU - Gaskill, D. K.

PY - 1995

Y1 - 1995

N2 - The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the"yellow" band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K.

AB - The photoluminescence spectrum of undoped epitaxial wurtzite GaN layers on sapphire was measured for applied hydrostatic pressures up to 73 kbar at 9 K and up to 62 kbar at 300 K. The pressure dependences of the I2 exciton recombination line and the"yellow" band (2.2 eV band at ambient pressure) were examined at 9 and 300 K, and the series of donor-acceptor-pair emission lines was analyzed at 9 K. From the I2 lines, it was found that the band gap increases with pressure by 4.4±0.1 meV/kbar at 9 K and 4.7±0.1 meV/kbar at 300 K.

UR - http://www.scopus.com/inward/record.url?scp=0029345043&partnerID=8YFLogxK

U2 - 10.1063/1.114635

DO - 10.1063/1.114635

M3 - Article

AN - SCOPUS:0029345043

SN - 0003-6951

VL - 67

SP - 380

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Photoluminescence from wurtzite GaN under hydrostatic pressure

Abstract

ASJC Scopus subject areas

Access to Document

Other files and links

Fingerprint

Cite this