Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy

H. C. Park, Dong Jin Byun, B. Angadi, D. Hee Park, W. K. Choi, J. W. Choi, Y. S. Jung

Research output: Contribution to journalArticle

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Abstract

High quality gallium doped ZnO (Ga:ZnO) thin films were grown on c- Al2 O3 (1000) by plasma-assisted molecular beam epitaxy, and Ga concentration NGa was controlled in the range of 1× 1018 -2.5× 1020 cm3 by adjustingchanging the Ga cell temperature. From the low-temperature photoluminescence at 10 K, the donor bound exciton I8 related to Ga impurity was clearly observed and confirmed by comparing the calculated activation energy of 16.8 meV of the emission peak intensity with the known localization energy, 16.1 meV. Observed asymmetric broadening with a long tail on the lower energy side in the photoluminescence (PL) emission line shape could be fitted by the Stark effect and the compensation ratio was approximately 14-17% at NGa 1× 1020 cm3. The measured broadening of photoluminescence PL emission is in good agreement with the total thermal broadening and potential fluctuations caused by random distribution of impurity at NGa lower than the Mott critical density.

Original languageEnglish
Article number073114
JournalJournal of Applied Physics
Volume102
Issue number7
DOIs
Publication statusPublished - 2007 Oct 22

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molecular beam epitaxy
photoluminescence
impurities
Stark effect
statistical distributions
gallium
line shape
excitons
activation energy
energy
thin films
cells
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy. / Park, H. C.; Byun, Dong Jin; Angadi, B.; Hee Park, D.; Choi, W. K.; Choi, J. W.; Jung, Y. S.

In: Journal of Applied Physics, Vol. 102, No. 7, 073114, 22.10.2007.

Research output: Contribution to journalArticle

Park, H. C. ; Byun, Dong Jin ; Angadi, B. ; Hee Park, D. ; Choi, W. K. ; Choi, J. W. ; Jung, Y. S. / Photoluminescence of Ga-doped ZnO film grown on c-Al2 O3 (0001) by plasma-assisted molecular beam epitaxy. In: Journal of Applied Physics. 2007 ; Vol. 102, No. 7.
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AU - Angadi, B.

AU - Hee Park, D.

AU - Choi, W. K.

AU - Choi, J. W.

AU - Jung, Y. S.

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