Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing

Byeongchul Ha, Heon Ham, Cheol Jin Lee

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O2 or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.

Original languageEnglish
Pages (from-to)2453-2456
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume69
Issue number10
DOIs
Publication statusPublished - 2008 Oct 1

Fingerprint

Oxygen vacancies
Nanowires
Photoluminescence
nanowires
Annealing
photoluminescence
annealing
oxygen
Oxygen
Gases
Defects
Argon
Optoelectronic devices
Vapors
Ions
defects
Catalysts
gases
Substrates
interstitials

Keywords

  • A. Nanostructures
  • A. Optical materials
  • D. Defects
  • D. Luminescence
  • D. Optical properties

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Photoluminescence of ZnO nanowires dependent on O2 and Ar annealing. / Ha, Byeongchul; Ham, Heon; Lee, Cheol Jin.

In: Journal of Physics and Chemistry of Solids, Vol. 69, No. 10, 01.10.2008, p. 2453-2456.

Research output: Contribution to journalArticle

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N2 - High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O2 or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.

AB - High-purity ZnO nanowires have been synthesized on Si substrates without the presence of a catalyst at 600 °C by a simple thermal vapor technique. Photoluminescence (PL) spectra of the annealed samples at 900 °C under oxygen and argon gases have been investigated. After O2 or Ar annealing, the PL visible-emission intensity that is related to intrinsic defects (oxygen vacancies) is greatly reduced compared with as-grown ZnO nanowires because the oxygen-gas ions or oxygen interstitials diffuse into the oxygen vacancies during annealing process. The blue-band peak of the O2- or Ar-annealed ZnO naonowires is also smaller than the green-band peak in the visible broadband because of the reduction of oxygen vacancies. Therefore, the main intrinsic defects (oxygen vacancies) of as-grown ZnO nanowires can be reduced by O2 or Ar annealing, which is an important procedure for the development of advanced optoelectronic ZnO nanowire devices.

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