Photoluminescence study of chloride VPE-grown GaN

Tetsuzo Ueda, Masaaki Yuri, Heon Lee, James S. Harris, Takaaki Baba

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have examined the effect of growth conditions on photoluminescence (PL) characteristics of chloride VPE-grown GaN films. Undoped GaN films are grown on sapphire by a newly developed chloride VPE system which utilizes GaCl 3 and NH 3 as source materials. We find that the spectra depend strongly on the growth temperatures and the corresponding surface morphology. Peaks from excitons and donor-acceptor pairs (D-A pair) recombination are observed for the films with terrace-like flat surfaces grown at between 950°C and 1000°C. A peak due to exciton bound to neutral donors is observed for a growth temperature of 975°C where the acceptor-related peaks are not seen. Decreasing the growth temperature below 950°C causes rough surfaces due to three-dimensional growth, whereas increasing the growth temperature above 1000°C causes cracks or partial pealing off of the film. The films with rough surfaces or crystal failures show broad emission from deep acceptor levels. As a result, residual acceptors are eliminated in the very narrow range of the growth temperature around 975°C. It is also noted that an increase of the V/III ratio during the growth makes the line width of the band-edge peak narrower. The PL results show that a growth temperature around 975°C and high V/III ratio are essential to obtain better crystal quality and reduced concentration of residual acceptors.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.J. Shul, S.J. Pearton, F. Ren, C.S. Wu
PublisherMaterials Research Society
Pages189-194
Number of pages6
Volume421
Publication statusPublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 1996 Apr 81996 Apr 12

Other

OtherProceedings of the 1996 MRS Spring Meeting
CitySan Francisco, CA, USA
Period96/4/896/4/12

Fingerprint

Vapor phase epitaxy
Growth temperature
Chlorides
Photoluminescence
Excitons
Crystals
Aluminum Oxide
Sapphire
Linewidth
Surface morphology
Cracks

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Ueda, T., Yuri, M., Lee, H., Harris, J. S., & Baba, T. (1996). Photoluminescence study of chloride VPE-grown GaN. In R. J. Shul, S. J. Pearton, F. Ren, & C. S. Wu (Eds.), Materials Research Society Symposium - Proceedings (Vol. 421, pp. 189-194). Materials Research Society.

Photoluminescence study of chloride VPE-grown GaN. / Ueda, Tetsuzo; Yuri, Masaaki; Lee, Heon; Harris, James S.; Baba, Takaaki.

Materials Research Society Symposium - Proceedings. ed. / R.J. Shul; S.J. Pearton; F. Ren; C.S. Wu. Vol. 421 Materials Research Society, 1996. p. 189-194.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ueda, T, Yuri, M, Lee, H, Harris, JS & Baba, T 1996, Photoluminescence study of chloride VPE-grown GaN. in RJ Shul, SJ Pearton, F Ren & CS Wu (eds), Materials Research Society Symposium - Proceedings. vol. 421, Materials Research Society, pp. 189-194, Proceedings of the 1996 MRS Spring Meeting, San Francisco, CA, USA, 96/4/8.
Ueda T, Yuri M, Lee H, Harris JS, Baba T. Photoluminescence study of chloride VPE-grown GaN. In Shul RJ, Pearton SJ, Ren F, Wu CS, editors, Materials Research Society Symposium - Proceedings. Vol. 421. Materials Research Society. 1996. p. 189-194
Ueda, Tetsuzo ; Yuri, Masaaki ; Lee, Heon ; Harris, James S. ; Baba, Takaaki. / Photoluminescence study of chloride VPE-grown GaN. Materials Research Society Symposium - Proceedings. editor / R.J. Shul ; S.J. Pearton ; F. Ren ; C.S. Wu. Vol. 421 Materials Research Society, 1996. pp. 189-194
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