Abstract
Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10 6. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
| Original language | English |
|---|---|
| Pages (from-to) | 963-968 |
| Number of pages | 6 |
| Journal | Nature Nanotechnology |
| Volume | 12 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2017 Oct 1 |
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ASJC Scopus subject areas
- Bioengineering
- Atomic and Molecular Physics, and Optics
- Biomedical Engineering
- Materials Science(all)
- Condensed Matter Physics
- Electrical and Electronic Engineering
Cite this
Photon-triggered nanowire transistors. / Kim, Jungkil; Lee, Hoo Cheol; Kim, Kyoung Ho; Hwang, Min Soo; Park, Jin Sung; Lee, Jung Min; So, Jae Pil; Choi, Jae Hyuck; Kwon, Soon Hong; Barrelet, Carl J.; Park, Hong Kyu.
In: Nature Nanotechnology, Vol. 12, No. 10, 01.10.2017, p. 963-968.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Photon-triggered nanowire transistors
AU - Kim, Jungkil
AU - Lee, Hoo Cheol
AU - Kim, Kyoung Ho
AU - Hwang, Min Soo
AU - Park, Jin Sung
AU - Lee, Jung Min
AU - So, Jae Pil
AU - Choi, Jae Hyuck
AU - Kwon, Soon Hong
AU - Barrelet, Carl J.
AU - Park, Hong Kyu
PY - 2017/10/1
Y1 - 2017/10/1
N2 - Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10 6. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
AB - Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10 6. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
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U2 - 10.1038/nnano.2017.153
DO - 10.1038/nnano.2017.153
M3 - Article
C2 - 28785091
AN - SCOPUS:85030763574
VL - 12
SP - 963
EP - 968
JO - Nature Nanotechnology
JF - Nature Nanotechnology
SN - 1748-3387
IS - 10
ER -