Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites

Seung Ho Yang, Mi Yeon Cho, Seong Gi Jo, Jin Sun Jung, Ki Hwa Jung, Suk Young Bae, Dong Hoon Choi, Sangsig Kim, Jinsoo Joo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We report on the photoresponsive ambipolar transport characteristics of organic thin film transistors (OTFTs) with two different types of electrodes using composites of soluble p-type x-shaped small molecules, 5,5′-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-diyl)bis(ethyne-2,1- diyl)bis(2-hexylthiophene) (HB-ant-THT) and n-type molecules, (6,6)-phenyl-C 61-butyric acid methyl ester (PCBM). Composites of HB-ant-THT and PCBM with varying concentration ratios were spin-coated as an active layer and thermal annealing was performed to increase the crystallinity of the active layer. The ambipolar transport characteristics were observed by applying the gate bias in OTFTs with a Au-Au electrode. With increasing the concentration of n-type PCBM, the hole mobility decreased while the electron mobility increased. We observed that the photocurrent in the OTFTs increased upon light irradiation. Ambipolar OTFTs prepared with Au-Al electrodes showed weak photovoltaic effect, and the power conversion efficiency of the devices increased with increasing the PCBM concentration.

Original languageEnglish
Pages (from-to)332-336
Number of pages5
JournalSynthetic Metals
Volume162
Issue number3-4
DOIs
Publication statusPublished - 2012 Mar 1

Fingerprint

Butyric acid
Butyric Acid
butyric acid
Thin film transistors
esters
Esters
transistors
composite materials
Composite materials
thin films
Electrodes
electrodes
Photovoltaic effects
Acetylene
photovoltaic effect
Molecules
Hole mobility
Anthracene
Electron mobility
hole mobility

Keywords

  • Ambipolar transistor
  • HB-ant-THT
  • Organic thin film transistor
  • PCBM
  • Photoresponse electrical characteristics
  • Photovoltaic effect

ASJC Scopus subject areas

  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Chemistry
  • Metals and Alloys
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites. / Yang, Seung Ho; Cho, Mi Yeon; Jo, Seong Gi; Jung, Jin Sun; Jung, Ki Hwa; Bae, Suk Young; Choi, Dong Hoon; Kim, Sangsig; Joo, Jinsoo.

In: Synthetic Metals, Vol. 162, No. 3-4, 01.03.2012, p. 332-336.

Research output: Contribution to journalArticle

Yang, Seung Ho ; Cho, Mi Yeon ; Jo, Seong Gi ; Jung, Jin Sun ; Jung, Ki Hwa ; Bae, Suk Young ; Choi, Dong Hoon ; Kim, Sangsig ; Joo, Jinsoo. / Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites. In: Synthetic Metals. 2012 ; Vol. 162, No. 3-4. pp. 332-336.
@article{748c17ea719c4131816d02f16a961be8,
title = "Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites",
abstract = "We report on the photoresponsive ambipolar transport characteristics of organic thin film transistors (OTFTs) with two different types of electrodes using composites of soluble p-type x-shaped small molecules, 5,5′-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-diyl)bis(ethyne-2,1- diyl)bis(2-hexylthiophene) (HB-ant-THT) and n-type molecules, (6,6)-phenyl-C 61-butyric acid methyl ester (PCBM). Composites of HB-ant-THT and PCBM with varying concentration ratios were spin-coated as an active layer and thermal annealing was performed to increase the crystallinity of the active layer. The ambipolar transport characteristics were observed by applying the gate bias in OTFTs with a Au-Au electrode. With increasing the concentration of n-type PCBM, the hole mobility decreased while the electron mobility increased. We observed that the photocurrent in the OTFTs increased upon light irradiation. Ambipolar OTFTs prepared with Au-Al electrodes showed weak photovoltaic effect, and the power conversion efficiency of the devices increased with increasing the PCBM concentration.",
keywords = "Ambipolar transistor, HB-ant-THT, Organic thin film transistor, PCBM, Photoresponse electrical characteristics, Photovoltaic effect",
author = "Yang, {Seung Ho} and Cho, {Mi Yeon} and Jo, {Seong Gi} and Jung, {Jin Sun} and Jung, {Ki Hwa} and Bae, {Suk Young} and Choi, {Dong Hoon} and Sangsig Kim and Jinsoo Joo",
year = "2012",
month = "3",
day = "1",
doi = "10.1016/j.synthmet.2011.12.014",
language = "English",
volume = "162",
pages = "332--336",
journal = "Synthetic Metals",
issn = "0379-6779",
publisher = "Elsevier BV",
number = "3-4",

}

TY - JOUR

T1 - Photoresponsive ambipolar transport characteristics of organic thin film transistors using soluble HB-ant-THT and PCBM composites

AU - Yang, Seung Ho

AU - Cho, Mi Yeon

AU - Jo, Seong Gi

AU - Jung, Jin Sun

AU - Jung, Ki Hwa

AU - Bae, Suk Young

AU - Choi, Dong Hoon

AU - Kim, Sangsig

AU - Joo, Jinsoo

PY - 2012/3/1

Y1 - 2012/3/1

N2 - We report on the photoresponsive ambipolar transport characteristics of organic thin film transistors (OTFTs) with two different types of electrodes using composites of soluble p-type x-shaped small molecules, 5,5′-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-diyl)bis(ethyne-2,1- diyl)bis(2-hexylthiophene) (HB-ant-THT) and n-type molecules, (6,6)-phenyl-C 61-butyric acid methyl ester (PCBM). Composites of HB-ant-THT and PCBM with varying concentration ratios were spin-coated as an active layer and thermal annealing was performed to increase the crystallinity of the active layer. The ambipolar transport characteristics were observed by applying the gate bias in OTFTs with a Au-Au electrode. With increasing the concentration of n-type PCBM, the hole mobility decreased while the electron mobility increased. We observed that the photocurrent in the OTFTs increased upon light irradiation. Ambipolar OTFTs prepared with Au-Al electrodes showed weak photovoltaic effect, and the power conversion efficiency of the devices increased with increasing the PCBM concentration.

AB - We report on the photoresponsive ambipolar transport characteristics of organic thin film transistors (OTFTs) with two different types of electrodes using composites of soluble p-type x-shaped small molecules, 5,5′-(9,10-bis((4-hexylphenyl)ethynyl) anthracene-2,6-diyl)bis(ethyne-2,1- diyl)bis(2-hexylthiophene) (HB-ant-THT) and n-type molecules, (6,6)-phenyl-C 61-butyric acid methyl ester (PCBM). Composites of HB-ant-THT and PCBM with varying concentration ratios were spin-coated as an active layer and thermal annealing was performed to increase the crystallinity of the active layer. The ambipolar transport characteristics were observed by applying the gate bias in OTFTs with a Au-Au electrode. With increasing the concentration of n-type PCBM, the hole mobility decreased while the electron mobility increased. We observed that the photocurrent in the OTFTs increased upon light irradiation. Ambipolar OTFTs prepared with Au-Al electrodes showed weak photovoltaic effect, and the power conversion efficiency of the devices increased with increasing the PCBM concentration.

KW - Ambipolar transistor

KW - HB-ant-THT

KW - Organic thin film transistor

KW - PCBM

KW - Photoresponse electrical characteristics

KW - Photovoltaic effect

UR - http://www.scopus.com/inward/record.url?scp=84862820566&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84862820566&partnerID=8YFLogxK

U2 - 10.1016/j.synthmet.2011.12.014

DO - 10.1016/j.synthmet.2011.12.014

M3 - Article

AN - SCOPUS:84862820566

VL - 162

SP - 332

EP - 336

JO - Synthetic Metals

JF - Synthetic Metals

SN - 0379-6779

IS - 3-4

ER -