Photosensitive cadmium telluride thin-film fieldeffect transistors

Gwangseok Yang, Donghwan Kim, Ji Hyun Kim

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the graphene-seeded growth and fabrication of photosensitive Cadmium telluride (CdTe)/graphene hybrid field-effect transistors (FETs) subjected to a post-growth activation process. CdTe thin films were selectively grown on pre-defined graphene, and their morphological, electrical and optoelectronic properties were systemically analyzed before and after the CdCl2 activation process. CdCl2-activated CdTe FETs showed p-type behavior with improved electrical features, including higher electrical conductivity (reduced sheet resistance from 1.09 × 109 to 5.55 × 107 Ω/sq.), higher mobility (from 0.025 to 0.20 cm2/(V·s)), and faster rise time (from 1.23 to 0.43 s). A post-growth activation process is essential to fabricate high-performance photosensitive CdTe/graphene hybrid devices.

Original languageEnglish
Pages (from-to)3607-3612
Number of pages6
JournalOptics Express
Volume24
Issue number4
DOIs
Publication statusPublished - 2016 Feb 22

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cadmium tellurides
graphene
transistors
activation
thin films
field effect transistors
electrical properties
fabrication
electrical resistivity

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

Cite this

Photosensitive cadmium telluride thin-film fieldeffect transistors. / Yang, Gwangseok; Kim, Donghwan; Kim, Ji Hyun.

In: Optics Express, Vol. 24, No. 4, 22.02.2016, p. 3607-3612.

Research output: Contribution to journalArticle

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