TY - JOUR
T1 - Photosensitive n-Type Doping Using Perovskite CsPbX3Quantum Dots for Two-Dimensional MSe2(M = Mo and W) Field-Effect Transistors
AU - Lee, Sang Hun
AU - Kim, Jun Young
AU - Choi, Sinil
AU - Lee, Yongjun
AU - Lee, Kwang Sup
AU - Kim, Jeongyong
AU - Joo, Jinsoo
N1 - Funding Information:
This study was supported by the National Research Foundation (NRF) of Korea funded by the Korean government (No. 2018R1A2B2006369). K.-S.L. gives thanks to the Asian Office of Aerospace Research and Development (AOARD, FA2386-17-1-4060), USA, for financial support.
Funding Information:
This study was supported by the National Research Foundation (NRF) of Korea funded by the Korean government (No. 2018R1A2B2006369). K.-S.L. gives thanks to the Asian Office of Aerospace Research and Development (AOARD FA2386-17-1-4060), USA, for financial support.
Publisher Copyright:
Copyright © 2020 American Chemical Society.
PY - 2020/6/3
Y1 - 2020/6/3
N2 - Perovskite CsPbX3 (X = Br, Cl, and I) nanostructures have been intensively studied as they are luminescent, photovoltaic, and photosensitizing active materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with MX2 (M = Mo, W; X = S, Se, Te, etc.) structures have been used in flexible optoelectronic devices. In this study, perovskite green-light-emitting CsPbBr2I1 quantum dots (QDs) and blue-light-emitting CsPb(Cl/Br)3-QDs are utilized to enhance the photoresponsive characteristics of 2D MSe2 (M = Mo and W)-based field-effect transistors (FETs). From laser confocal microscopy photoluminescence (PL) experiments, PL quenching of the perovskite CsPb(Cl/Br)3-QDs and CsPbBr2I1-QDs is observed after hybridization with MoSe2 and WSe2 layers, respectively, which reflects the charge-transfer effect. According to the characteristics of the FETs based on the WSe2, MoSe2, WSe2/CsPbBr2I1-QDs hybrid, and MoSe2/CsPb(Cl/Br)3-QDs hybrid, the p-channel current (with hole mobility) is considerably decreased after the hybridization with the QDs. Notably, under incident light, the n-channel photocurrent and photoresponsivity of the FET are substantially increased, and the threshold voltage is negatively shifted owing to the hybridization with the perovskite QDs. The results show that the photosensitive n-type doping effect on the 2D MoSe2 and WSe2 nanosystems originates from the photogating effect by the trap states after the hybridization with various perovskite CsPbX3-QDs.
AB - Perovskite CsPbX3 (X = Br, Cl, and I) nanostructures have been intensively studied as they are luminescent, photovoltaic, and photosensitizing active materials. Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) with MX2 (M = Mo, W; X = S, Se, Te, etc.) structures have been used in flexible optoelectronic devices. In this study, perovskite green-light-emitting CsPbBr2I1 quantum dots (QDs) and blue-light-emitting CsPb(Cl/Br)3-QDs are utilized to enhance the photoresponsive characteristics of 2D MSe2 (M = Mo and W)-based field-effect transistors (FETs). From laser confocal microscopy photoluminescence (PL) experiments, PL quenching of the perovskite CsPb(Cl/Br)3-QDs and CsPbBr2I1-QDs is observed after hybridization with MoSe2 and WSe2 layers, respectively, which reflects the charge-transfer effect. According to the characteristics of the FETs based on the WSe2, MoSe2, WSe2/CsPbBr2I1-QDs hybrid, and MoSe2/CsPb(Cl/Br)3-QDs hybrid, the p-channel current (with hole mobility) is considerably decreased after the hybridization with the QDs. Notably, under incident light, the n-channel photocurrent and photoresponsivity of the FET are substantially increased, and the threshold voltage is negatively shifted owing to the hybridization with the perovskite QDs. The results show that the photosensitive n-type doping effect on the 2D MoSe2 and WSe2 nanosystems originates from the photogating effect by the trap states after the hybridization with various perovskite CsPbX3-QDs.
KW - field-effect transistor
KW - perovskite quantum dot
KW - photodetector
KW - photogating
KW - transition-metal dichalcogenide
UR - http://www.scopus.com/inward/record.url?scp=85086479931&partnerID=8YFLogxK
U2 - 10.1021/acsami.0c04924
DO - 10.1021/acsami.0c04924
M3 - Article
C2 - 32390418
AN - SCOPUS:85086479931
VL - 12
SP - 25159
EP - 25167
JO - ACS applied materials & interfaces
JF - ACS applied materials & interfaces
SN - 1944-8244
IS - 22
ER -