Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures

Ji Chul Jung, Min Seok Kang, Ji Hong Kim, Jin Woo Lee, Byung-Moo Moon, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Among the wide band gap semiconductor materials that have drawn a lot of attention recently, ZnO and SiC are seriously considered as materials for emerging electronics applications. ZnO has received attention for its application for UV light-emitters, transparent high power electronics, sensors, piezo electric transducers, and solar cells, because of its high chemical stability, non-toxicity, low cost and high optical band gap of 3.37 eV. 4H-SiC has very a small lattice mismatch to ZnO (5%), a wide band gap (3.2 eV) with excellent thermal properties, and thus suitable for applications such as optoelectronic, high-power, high-frequency, and high-temperature devices. In addition, its useful properties include the existence of the availability of large area substrate, and a high electron saturation velocity.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

Fingerprint

Photosensitivity
Heterojunctions
Lattice mismatch
Piezoelectric transducers
Chemical stability
Optical band gaps
Power electronics
Ultraviolet radiation
Optoelectronic devices
Solar cells
Energy gap
Electronic equipment
Thermodynamic properties
Availability
Semiconductor materials
Electrons
Sensors
Substrates
Costs
Temperature

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jung, J. C., Kang, M. S., Kim, J. H., Lee, J. W., Moon, B-M., & Koo, S. M. (2011). Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135312] https://doi.org/10.1109/ISDRS.2011.6135312

Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures. / Jung, Ji Chul; Kang, Min Seok; Kim, Ji Hong; Lee, Jin Woo; Moon, Byung-Moo; Koo, Sang Mo.

2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135312.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jung, JC, Kang, MS, Kim, JH, Lee, JW, Moon, B-M & Koo, SM 2011, Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures. in 2011 International Semiconductor Device Research Symposium, ISDRS 2011., 6135312, 2011 International Semiconductor Device Research Symposium, ISDRS 2011, College Park, MD, United States, 11/12/7. https://doi.org/10.1109/ISDRS.2011.6135312
Jung JC, Kang MS, Kim JH, Lee JW, Moon B-M, Koo SM. Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011. 6135312 https://doi.org/10.1109/ISDRS.2011.6135312
Jung, Ji Chul ; Kang, Min Seok ; Kim, Ji Hong ; Lee, Jin Woo ; Moon, Byung-Moo ; Koo, Sang Mo. / Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures. 2011 International Semiconductor Device Research Symposium, ISDRS 2011. 2011.
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