Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures

Ji Chul Jung, Min Seok Kang, Ji Hong Kim, Jin Woo Lee, Byung-Moo Moon, Sang Mo Koo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Among the wide band gap semiconductor materials that have drawn a lot of attention recently, ZnO and SiC are seriously considered as materials for emerging electronics applications. ZnO has received attention for its application for UV light-emitters, transparent high power electronics, sensors, piezo electric transducers, and solar cells, because of its high chemical stability, non-toxicity, low cost and high optical band gap of 3.37 eV. 4H-SiC has very a small lattice mismatch to ZnO (5%), a wide band gap (3.2 eV) with excellent thermal properties, and thus suitable for applications such as optoelectronic, high-power, high-frequency, and high-temperature devices. In addition, its useful properties include the existence of the availability of large area substrate, and a high electron saturation velocity.

Original languageEnglish
Title of host publication2011 International Semiconductor Device Research Symposium, ISDRS 2011
DOIs
Publication statusPublished - 2011 Dec 1
Externally publishedYes
Event2011 International Semiconductor Device Research Symposium, ISDRS 2011 - College Park, MD, United States
Duration: 2011 Dec 72011 Dec 9

Other

Other2011 International Semiconductor Device Research Symposium, ISDRS 2011
CountryUnited States
CityCollege Park, MD
Period11/12/711/12/9

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ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jung, J. C., Kang, M. S., Kim, J. H., Lee, J. W., Moon, B-M., & Koo, S. M. (2011). Photosensitivity analysis of n-ZnO/p-SiC heterojunction structures. In 2011 International Semiconductor Device Research Symposium, ISDRS 2011 [6135312] https://doi.org/10.1109/ISDRS.2011.6135312