Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid

Cheol Joon Park, Hyeon Jung Park, Jae Yoon Lee, Jeongyong Kim, Chul Ho Lee, Jinsoo Joo

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)


A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate-tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. Furthermore, the photovoltaic FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices.

Original languageEnglish
Pages (from-to)29848-29856
Number of pages9
JournalACS Applied Materials and Interfaces
Issue number35
Publication statusPublished - 2018 Sept 5


  • ambipolar
  • molybdenum disulfide
  • photovoltaic
  • rubrene
  • transistor

ASJC Scopus subject areas

  • Materials Science(all)


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