Hf-silicate films were grown by using atomic layer deposition with Hf[N(CH 3)(C 2H 5)] 4 and SiH[N(CH 3) 2] 3 precursors. The composition of the Hf-silicate films was excellently well controlled by using the ratio of the deposition cycles of HfO 2 and SiU 2 (Hf/Si). The physical and the electrical characteristics of the Hf-silicate films were compared for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3. The relative Hf/(Hf+Si) compositions were 58%, 41%, and 25% for Hf/Si = 3/1, Hf/Si = 1/1, and Hf/Si = 1/3, respectively. The binding characteristics of the Hf-silicate films were shifted in the direction of higher binding energy with increasing of SiO 2 portion, resulting in electric charging. The molecular structure of the Hf-silicate films was changed by the relative compositions of HfO 2 and SiO 2. In addition, the dielectric characteristics of the Hf-silicate films were directly proportional to the HfO 2 portion.
|Number of pages||7|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2006 Apr 1|
- Atomic layer deposition
- High-k dielectric
ASJC Scopus subject areas
- Physics and Astronomy(all)