Physical Properties of (Na1-xKx)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer

Sang Hyo Kweon, Jong Hyun Kim, Mir Im, Woonghee Lee, Sahn Nahm

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

A monolayer Ca2Nb3O10 (CNO) nanosheet was deposited on a Pt/Ti/SiO2/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na1-xKx)NbO3 (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400oC. The ferroelectric and piezoelectric properties of this NKN film were influenced by the post-annealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300oC under 50 Torr O2 atmosphere showed promising ferroelectric and piezoelectric properties; ϵr of 303 and tan δ of 2.0% at 100 kHz, Ps of 15.3 μC/cm2, Pr of 11.7 μC/cm2, and Ec of 78 kV/cm, and d33 of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 eV and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal oxide nanosheets as the seed layer.

Original languageEnglish
JournalACS Applied Materials and Interfaces
DOIs
Publication statusAccepted/In press - 2018 Jun 7

Fingerprint

Nanosheets
Seed
Physical properties
Thin films
Crystalline materials
Temperature
Ferroelectric materials
Monolayers
Growth temperature
Oxygen vacancies
Leakage currents
Oxides
Metals
Annealing
Substrates

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Physical Properties of (Na1-xKx)NbO3 Thin Film Grown at Low Temperature Using Two-Dimensional Ca2Nb3O10 Nanosheet Seed Layer. / Kweon, Sang Hyo; Kim, Jong Hyun; Im, Mir; Lee, Woonghee; Nahm, Sahn.

In: ACS Applied Materials and Interfaces, 07.06.2018.

Research output: Contribution to journalArticle

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abstract = "A monolayer Ca2Nb3O10 (CNO) nanosheet was deposited on a Pt/Ti/SiO2/Si substrate using the Langmuir-Blodgett method. This monolayer CNO nanosheet with a (001) surface termination was used as a seed layer to reduce the growth temperature of the crystalline (Na1-xKx)NbO3 (NKN) film. The crystalline NKN film was preferentially grown along the [001] direction at 400oC. The ferroelectric and piezoelectric properties of this NKN film were influenced by the post-annealing atmosphere due to the variations in the amounts of oxygen vacancies in the NKN film. The crystalline NKN film annealed at 300oC under 50 Torr O2 atmosphere showed promising ferroelectric and piezoelectric properties; ϵr of 303 and tan δ of 2.0{\%} at 100 kHz, Ps of 15.3 μC/cm2, Pr of 11.7 μC/cm2, and Ec of 78 kV/cm, and d33 of 139 pm/V. This NKN film showed the lowest leakage current, which can be explained by the Schottky emission mechanism. The Schottky barrier heights of the Pt/NKN and NKN/CNO/Pt interfaces were calculated to be 0.97 eV and 0.28 eV, respectively. The results of this work suggest a new method to grow crystalline thin films at low temperatures by using metal oxide nanosheets as the seed layer.",
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