Planar MESFET grid oscillators using gate feedback

Robert W. Weikle, Moonil Kim, Jonathan B. Hacker, Michael P. De Lisio, David B. Rutledge

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

A method for quasi-optically combining the output power of MESFETs in which drain and source leads couple directly to the radiated field is introduced. The design consists of a planar grid of devices placed in a Fabry-Perot cavity. Capacitive feedback is provided to the gate, allowing oscillation at much higher frequencies than previous grids. The oscillation frequency is dependent on the device characteristics, M+e resonator cavity, and the symmetries of the grid. A transmission-line model for the grid is discussed and used to design two oscillator arrays. A 16-element grid has produced 335 mW of power at 11.6 GHz with a DC-to-RF conversion efficiency of 20%. This design was scaled to produce a 36-element grid oscillator with output power of 235 mW at 17 GHz. These results represent a significant improvement in the performance of planar grid oscillators. The planar configuration of the grid is very convenient for monolithic integration and is easily scalable to millimeter-wave frequencies.

Original languageEnglish
Pages (from-to)1997-2003
Number of pages7
JournalIEEE Transactions on Microwave Theory and Techniques
Volume40
Issue number11
DOIs
Publication statusPublished - 1992 Nov 1
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Weikle, R. W., Kim, M., Hacker, J. B., De Lisio, M. P., & Rutledge, D. B. (1992). Planar MESFET grid oscillators using gate feedback. IEEE Transactions on Microwave Theory and Techniques, 40(11), 1997-2003. https://doi.org/10.1109/22.168756