Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Han Ki Kim, D. G. Kim, K. S. Lee, M. S. Huh, S. H. Jeong, K. I. Kim, Tae Yeon Seong

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We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

Original languageEnglish
Article number183503
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Issue number18
Publication statusPublished - 2005 May 2
Externally publishedYes


ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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