Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes

Han Ki Kim, D. G. Kim, K. S. Lee, M. S. Huh, S. H. Jeong, K. I. Kim, Tae Yeon Seong

Research output: Contribution to journalArticle

116 Citations (Scopus)

Abstract

We report on plasma damage-free sputtering of an indium tin oxide (ITO) cathode layer, which was grown by a mirror shape target sputtering (MSTS) technique, for use in top-emitting organic light-emitting diodes (TOLEDs). It is shown that OLEDs with ITO cathodes deposited by MSTS show much lower leakage current (9.2× 10-5 mA cm2) at reverse bias of -6 V as compared to that (1× 10-1 - 10-2 mA cm2 at -6 V) of OLEDs with ITO cathodes grown by conventional dc magnetron sputtering. Based on high-resolution electron microcopy, x-ray diffraction, and scanning electron microscopy results, we describe a possible mechanism by which plasma damage-free ITO films are grown and their application for TOLEDs.

Original languageEnglish
Article number183503
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number18
DOIs
Publication statusPublished - 2005 May 2
Externally publishedYes

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indium oxides
tin oxides
light emitting diodes
cathodes
sputtering
damage
mirrors
oxide films
magnetron sputtering
x ray diffraction
leakage
scanning electron microscopy
high resolution
electrons

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes. / Kim, Han Ki; Kim, D. G.; Lee, K. S.; Huh, M. S.; Jeong, S. H.; Kim, K. I.; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 86, No. 18, 183503, 02.05.2005, p. 1-3.

Research output: Contribution to journalArticle

Kim, Han Ki ; Kim, D. G. ; Lee, K. S. ; Huh, M. S. ; Jeong, S. H. ; Kim, K. I. ; Seong, Tae Yeon. / Plasma damage-free sputtering of indium tin oxide cathode layers for top-emitting organic light-emitting diodes. In: Applied Physics Letters. 2005 ; Vol. 86, No. 18. pp. 1-3.
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