Plasma pretreatment on Si(1 1 1) substrates for the growth of ZnO thin films

Junjie Zhu, Ran Yao, Sheng Zhong, Zhuxi Fu, In-Hwan Lee

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11 Citations (Scopus)

Abstract

ZnO films have been grown on Si(1 1 1) substrates by metal-organic chemical vapor deposition. The Si substrates were pretreated by the Ar+ plasma bombardment before the ZnO growth for the purpose of eliminating the remnant amorphous silica layers from the substrates' surface. The effects of the plasma pretreatment on the growth of ZnO were investigated. The crystalline quality, surface morphology and photoluminescence property of the ZnO films were significantly improved by the pretreatment process. However, with increasing the plasma power, the quality of ZnO films was degraded due to the damage of the Si substrates by the bombardment.

Original languageEnglish
Pages (from-to)655-658
Number of pages4
JournalJournal of Crystal Growth
Volume303
Issue number2
DOIs
Publication statusPublished - 2007 May 15
Externally publishedYes

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Keywords

  • A1. Surface processes
  • A3. Metal-organic vapor phase deposition
  • B1. ZnO films

ASJC Scopus subject areas

  • Condensed Matter Physics

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