Plasma pretreatment on Si(1 1 1) substrates for the growth of ZnO thin films

Junjie Zhu, Ran Yao, Sheng Zhong, Zhuxi Fu, In-Hwan Lee

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

ZnO films have been grown on Si(1 1 1) substrates by metal-organic chemical vapor deposition. The Si substrates were pretreated by the Ar+ plasma bombardment before the ZnO growth for the purpose of eliminating the remnant amorphous silica layers from the substrates' surface. The effects of the plasma pretreatment on the growth of ZnO were investigated. The crystalline quality, surface morphology and photoluminescence property of the ZnO films were significantly improved by the pretreatment process. However, with increasing the plasma power, the quality of ZnO films was degraded due to the damage of the Si substrates by the bombardment.

Original languageEnglish
Pages (from-to)655-658
Number of pages4
JournalJournal of Crystal Growth
Volume303
Issue number2
DOIs
Publication statusPublished - 2007 May 15
Externally publishedYes

Fingerprint

pretreatment
Plasmas
Thin films
Substrates
thin films
bombardment
Organic Chemicals
Organic chemicals
Silicon Dioxide
metalorganic chemical vapor deposition
Surface morphology
Chemical vapor deposition
Photoluminescence
Metals
Silica
silicon dioxide
Crystalline materials
damage
photoluminescence

Keywords

  • A1. Surface processes
  • A3. Metal-organic vapor phase deposition
  • B1. ZnO films

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Plasma pretreatment on Si(1 1 1) substrates for the growth of ZnO thin films. / Zhu, Junjie; Yao, Ran; Zhong, Sheng; Fu, Zhuxi; Lee, In-Hwan.

In: Journal of Crystal Growth, Vol. 303, No. 2, 15.05.2007, p. 655-658.

Research output: Contribution to journalArticle

Zhu, Junjie ; Yao, Ran ; Zhong, Sheng ; Fu, Zhuxi ; Lee, In-Hwan. / Plasma pretreatment on Si(1 1 1) substrates for the growth of ZnO thin films. In: Journal of Crystal Growth. 2007 ; Vol. 303, No. 2. pp. 655-658.
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