Plasma treatment effect on charge carrier concentrations and surface traps in a-InGaZnO thin-film transistors

Jae Sung Kim, Min Kyu Joo, Ming Xing Piao, Seung Eon Ahn, Yong Hee Choi, Ho Kyun Jang, Gyu Tae Kim

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22 Citations (Scopus)

Abstract

Various plasma treatment effects such as oxygen (O2), nitrogen (N2), and argon (Ar) on amorphous indium gallium zinc oxide thin-film transistors (a-IGZO TFTs) are investigated. To study oxygen stoichiometry in a-IGZO TFTs with respect to various plasma environments, X-ray photoelectron spectroscopy was employed. The results showed that oxygen vacancies were reduced by O2 and N2 plasmas while they were increased after Ar plasma treatment. Additionally, the effects of plasma treatment on trap distribution in bulk and surface channels were explored by means of low-frequency noise analysis. Details of the mechanisms used for generating and restoring traps on the surface and bulk channel are presented.

Original languageEnglish
Article number114503
JournalJournal of Applied Physics
Volume115
Issue number11
DOIs
Publication statusPublished - 2014 Mar 21

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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