Plasmonically-enhanced emission from an inverted GaN light emitting diode

Michael A. Mastro, Byung Jae Kim, J. A. Freitas, Joshua D. Caldwell, Ron Rendell, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the nearbandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.

Original languageEnglish
Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
Volume8096
DOIs
Publication statusPublished - 2011 Oct 19
EventPlasmonics: Metallic Nanostructures and Their Optical Properties IX - San Diego, CA, United States
Duration: 2011 Aug 212011 Aug 25

Other

OtherPlasmonics: Metallic Nanostructures and Their Optical Properties IX
CountryUnited States
CitySan Diego, CA
Period11/8/2111/8/25

Fingerprint

Silver Nanoparticles
Exciton
Quantum Well
Diode
Light emitting diodes
light emitting diodes
Contact
Nanoparticles
AlGaN
Surface Plasmons
Silver
Excitons
nanoparticles
Semiconductor quantum wells
Surface Plasmon
Free Space
Scatter
Tunnel
silver
excitons

Keywords

  • GaN
  • LED
  • Plasmonic
  • Silver

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Mastro, M. A., Kim, B. J., Freitas, J. A., Caldwell, J. D., Rendell, R., Hite, J., ... Kim, J. H. (2011). Plasmonically-enhanced emission from an inverted GaN light emitting diode. In Proceedings of SPIE - The International Society for Optical Engineering (Vol. 8096). [809615] https://doi.org/10.1117/12.894010

Plasmonically-enhanced emission from an inverted GaN light emitting diode. / Mastro, Michael A.; Kim, Byung Jae; Freitas, J. A.; Caldwell, Joshua D.; Rendell, Ron; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.

Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8096 2011. 809615.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Mastro, MA, Kim, BJ, Freitas, JA, Caldwell, JD, Rendell, R, Hite, J, Eddy, CR & Kim, JH 2011, Plasmonically-enhanced emission from an inverted GaN light emitting diode. in Proceedings of SPIE - The International Society for Optical Engineering. vol. 8096, 809615, Plasmonics: Metallic Nanostructures and Their Optical Properties IX, San Diego, CA, United States, 11/8/21. https://doi.org/10.1117/12.894010
Mastro MA, Kim BJ, Freitas JA, Caldwell JD, Rendell R, Hite J et al. Plasmonically-enhanced emission from an inverted GaN light emitting diode. In Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8096. 2011. 809615 https://doi.org/10.1117/12.894010
Mastro, Michael A. ; Kim, Byung Jae ; Freitas, J. A. ; Caldwell, Joshua D. ; Rendell, Ron ; Hite, Jennifer ; Eddy, Charles R. ; Kim, Ji Hyun. / Plasmonically-enhanced emission from an inverted GaN light emitting diode. Proceedings of SPIE - The International Society for Optical Engineering. Vol. 8096 2011.
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