Plasmonically-enhanced emission from an inverted GaN light emitting diode

Michael A. Mastro, Byung Jae Kim, J. A. Freitas, Joshua D. Caldwell, Ron Rendell, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silver nanoparticles dispersed on the surface of an inverted GaN LED were found to plasmonically enhance the nearbandedge emission. The resonant surface plasmon coupling led to a significant enhancement in the exciton decay rate and the ensemble of nanoparticles provided a mechanism to scatter the coupled energy as free space radiation. The inverted LED structure employed a tunnel junction to avoid the standard thick p+ GaN current spreading contact layer. In contrast to a standard design, the top contact was a thin n++ AlGaN layer, which brought the quantum well into the fringing field of the silver nanoparticles. This proximity allowed the excitons induced within the quantum well to couple to the surface plasmons, which in turn led to the enhanced band edge emission from the LED.

Original languageEnglish
Title of host publicationPlasmonics
Subtitle of host publicationMetallic Nanostructures and Their Optical Properties IX
DOIs
Publication statusPublished - 2011
EventPlasmonics: Metallic Nanostructures and Their Optical Properties IX - San Diego, CA, United States
Duration: 2011 Aug 212011 Aug 25

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8096
ISSN (Print)0277-786X

Other

OtherPlasmonics: Metallic Nanostructures and Their Optical Properties IX
CountryUnited States
CitySan Diego, CA
Period11/8/2111/8/25

Keywords

  • GaN
  • LED
  • Plasmonic
  • Silver

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Mastro, M. A., Kim, B. J., Freitas, J. A., Caldwell, J. D., Rendell, R., Hite, J., Eddy, C. R., & Kim, J. (2011). Plasmonically-enhanced emission from an inverted GaN light emitting diode. In Plasmonics: Metallic Nanostructures and Their Optical Properties IX [809615] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8096). https://doi.org/10.1117/12.894010