Abstract
Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.
| Original language | English |
|---|---|
| Article number | 032107 |
| Journal | Applied Physics Letters |
| Volume | 112 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 2018 Jan 15 |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage. / Polyakov, A. Y.; Smirnov, N. B.; Shchemerov, I. V.; Yakimov, E. B.; Yang, Jiancheng; Ren, F.; Yang, Gwangseok; Kim, Ji Hyun; Kuramata, A.; Pearton, S. J.
In: Applied Physics Letters, Vol. 112, No. 3, 032107, 15.01.2018.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Point defect induced degradation of electrical properties of Ga2O3 by 10 MeV proton damage
AU - Polyakov, A. Y.
AU - Smirnov, N. B.
AU - Shchemerov, I. V.
AU - Yakimov, E. B.
AU - Yang, Jiancheng
AU - Ren, F.
AU - Yang, Gwangseok
AU - Kim, Ji Hyun
AU - Kuramata, A.
AU - Pearton, S. J.
PY - 2018/1/15
Y1 - 2018/1/15
N2 - Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.
AB - Deep electron and hole traps in 10 MeV proton irradiated high-quality β-Ga2O3 films grown by Hydride Vapor Phase Epitaxy (HVPE) on bulk β-Ga2O3 substrates were measured by deep level transient spectroscopy with electrical and optical injection, capacitance-voltage profiling in the dark and under monochromatic irradiation, and also electron beam induced current. Proton irradiation caused the diffusion length of charge carriers to decrease from 350-380 μm in unirradiated samples to 190 μm for a fluence of 1014 cm-2, and this was correlated with an increase in density of hole traps with optical ionization threshold energy near 2.3 eV. These defects most likely determine the recombination lifetime in HVPE β-Ga2O3 epilayers. Electron traps at Ec-0.75 eV and Ec-1.2 eV present in as-grown samples increase in the concentration after irradiation and suggest that these centers involve native point defects.
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U2 - 10.1063/1.5012993
DO - 10.1063/1.5012993
M3 - Article
AN - SCOPUS:85041435806
VL - 112
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 032107
ER -