Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

In Hwan Lee; A. Y. Polyakov; N. B. Smirnov; I. V. Shchemerov; P. B. Lagov; R. A. Zinov'Ev; E. B. Yakimov; K. D. Shcherbachev; S. J. Pearton

doi:10.1063/1.5000956

Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

In Hwan Lee, A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, P. B. Lagov, R. A. Zinov'Ev, E. B. Yakimov, K. D. Shcherbachev, S. J. Pearton

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The role of Shockley-Read-Hall non-radiative recombination centers on electroluminescence (EL) efficiency in blue multi-quantum-well (MQW) 436 nm GaN/InGaN light emitting diodes (LEDs) was examined by controlled introduction of point defects through 6 MeV electron irradiation. The decrease in the EL efficiency in LEDs subjected to irradiation with fluences above 5 × 10¹⁵ cm^-2 was closely correlated to the increase in concentration of E_c-0.7 eV electron traps in the active MQW region. This increase in trap density was accompanied by an increase in the both diode series resistance and ideality factor (from 1.4 before irradiation to 2.1 after irradiation), as well as the forward leakage current at low forward voltages that compromise the injection efficiency. Hole traps present in the blue LEDs do not have a significant effect on EL changes with radiation because of their low concentration.

Original language	English
Article number	115704
Journal	Journal of Applied Physics
Volume	122
Issue number	11
DOIs	https://doi.org/10.1063/1.5000956
Publication status	Published - 2017 Sep 21

ASJC Scopus subject areas

Physics and Astronomy(all)

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Lee, I. H., Polyakov, A. Y., Smirnov, N. B., Shchemerov, I. V., Lagov, P. B., Zinov'Ev, R. A., Yakimov, E. B., Shcherbachev, K. D., & Pearton, S. J. (2017). Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments. Journal of Applied Physics, 122(11), [115704]. https://doi.org/10.1063/1.5000956

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title = "Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments",

abstract = "The role of Shockley-Read-Hall non-radiative recombination centers on electroluminescence (EL) efficiency in blue multi-quantum-well (MQW) 436 nm GaN/InGaN light emitting diodes (LEDs) was examined by controlled introduction of point defects through 6 MeV electron irradiation. The decrease in the EL efficiency in LEDs subjected to irradiation with fluences above 5 × 1015 cm-2 was closely correlated to the increase in concentration of Ec-0.7 eV electron traps in the active MQW region. This increase in trap density was accompanied by an increase in the both diode series resistance and ideality factor (from 1.4 before irradiation to 2.1 after irradiation), as well as the forward leakage current at low forward voltages that compromise the injection efficiency. Hole traps present in the blue LEDs do not have a significant effect on EL changes with radiation because of their low concentration.",

author = "Lee, {In Hwan} and Polyakov, {A. Y.} and Smirnov, {N. B.} and Shchemerov, {I. V.} and Lagov, {P. B.} and Zinov'Ev, {R. A.} and Yakimov, {E. B.} and Shcherbachev, {K. D.} and Pearton, {S. J.}",

note = "Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST(MISiS) (K2-2014-055). The work at Korea University was supported by the National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2017R1A2B3006141). The work at UF was supported by DTRA Grant No. HDTRA1-17-1-0011. Publisher Copyright: {\textcopyright} 2017 Author(s).",

year = "2017",

month = sep,

day = "21",

doi = "10.1063/1.5000956",

language = "English",

volume = "122",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

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TY - JOUR

T1 - Point defects controlling non-radiative recombination in GaN blue light emitting diodes

T2 - Insights from radiation damage experiments

AU - Lee, In Hwan

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Shchemerov, I. V.

AU - Lagov, P. B.

AU - Zinov'Ev, R. A.

AU - Yakimov, E. B.

AU - Shcherbachev, K. D.

AU - Pearton, S. J.

N1 - Funding Information: The work at NUST MISiS was supported in part by the Ministry of Education and Science of the Russian Federation in the framework of Increase Competitiveness Program of NUST(MISiS) (K2-2014-055). The work at Korea University was supported by the National Research Foundation of Korea (NRF) funded by Ministry of Science, ICT & Future Planning (2017R1A2B3006141). The work at UF was supported by DTRA Grant No. HDTRA1-17-1-0011. Publisher Copyright: © 2017 Author(s).

PY - 2017/9/21

Y1 - 2017/9/21

N2 - The role of Shockley-Read-Hall non-radiative recombination centers on electroluminescence (EL) efficiency in blue multi-quantum-well (MQW) 436 nm GaN/InGaN light emitting diodes (LEDs) was examined by controlled introduction of point defects through 6 MeV electron irradiation. The decrease in the EL efficiency in LEDs subjected to irradiation with fluences above 5 × 1015 cm-2 was closely correlated to the increase in concentration of Ec-0.7 eV electron traps in the active MQW region. This increase in trap density was accompanied by an increase in the both diode series resistance and ideality factor (from 1.4 before irradiation to 2.1 after irradiation), as well as the forward leakage current at low forward voltages that compromise the injection efficiency. Hole traps present in the blue LEDs do not have a significant effect on EL changes with radiation because of their low concentration.

AB - The role of Shockley-Read-Hall non-radiative recombination centers on electroluminescence (EL) efficiency in blue multi-quantum-well (MQW) 436 nm GaN/InGaN light emitting diodes (LEDs) was examined by controlled introduction of point defects through 6 MeV electron irradiation. The decrease in the EL efficiency in LEDs subjected to irradiation with fluences above 5 × 1015 cm-2 was closely correlated to the increase in concentration of Ec-0.7 eV electron traps in the active MQW region. This increase in trap density was accompanied by an increase in the both diode series resistance and ideality factor (from 1.4 before irradiation to 2.1 after irradiation), as well as the forward leakage current at low forward voltages that compromise the injection efficiency. Hole traps present in the blue LEDs do not have a significant effect on EL changes with radiation because of their low concentration.

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U2 - 10.1063/1.5000956

DO - 10.1063/1.5000956

M3 - Article

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VL - 122

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

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M1 - 115704

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Point defects controlling non-radiative recombination in GaN blue light emitting diodes: Insights from radiation damage experiments

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