Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements

R. Gul, K. Keeter, R. Rodriguez, A. E. Bolotnikov, A. Hossain, G. S. Camarda, K. H. Kim, G. Yang, Y. Cui, V. Carcelen, J. Franc, Z. Li, R. B. James

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.

Original languageEnglish
Pages (from-to)488-493
Number of pages6
JournalJournal of Electronic Materials
Volume41
Issue number3
DOIs
Publication statusPublished - 2012 Mar
Externally publishedYes

Keywords

  • Bismuth
  • Capture cross-section
  • CdZnTe detectors
  • DLTS
  • Dopant
  • Indium
  • Lead
  • Point defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Gul, R., Keeter, K., Rodriguez, R., Bolotnikov, A. E., Hossain, A., Camarda, G. S., Kim, K. H., Yang, G., Cui, Y., Carcelen, V., Franc, J., Li, Z., & James, R. B. (2012). Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements. Journal of Electronic Materials, 41(3), 488-493. https://doi.org/10.1007/s11664-011-1802-y