Point defects in Pb-, Bi-, and in-doped CdZnTe detectors

Deep-level transient spectroscopy (DLTS) measurements

R. Gul, K. Keeter, R. Rodriguez, A. E. Bolotnikov, A. Hossain, G. S. Camarda, Kihyun Kim, G. Yang, Y. Cui, V. Carcelen, J. Franc, Z. Li, R. B. James

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

We studied, by current deep-level transient spectroscopy (I-DLTS), point defects induced in CdZnTe detectors by three dopants: Pb, Bi, and In. Pb-doped CdZnTe detectors have a new acceptor trap at around 0.48 eV. The absence of a VCd trap suggests that all Cd vacancies are compensated by Pb interstitials after they form a deep-acceptor complex [[Pb Cd] +-V Cd2 -] -. Bi-doped CdZnTe detectors had two distinct traps: a shallow trap at around 36 meV and a deep donor trap at around 0.82 eV. In detectors doped with In, we noted three well-known traps: two acceptor levels at around 0.18 eV (A-centers) and 0.31 eV (V Cd), and a deep trap at around 1.1 eV.

Original languageEnglish
Pages (from-to)488-493
Number of pages6
JournalJournal of Electronic Materials
Volume41
Issue number3
DOIs
Publication statusPublished - 2012 Mar 1
Externally publishedYes

Fingerprint

Deep level transient spectroscopy
Point defects
point defects
traps
Detectors
detectors
spectroscopy
Vacancies
Doping (additives)
CdZnTe
interstitials

Keywords

  • Bismuth
  • Capture cross-section
  • CdZnTe detectors
  • DLTS
  • Dopant
  • Indium
  • Lead
  • Point defects

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Gul, R., Keeter, K., Rodriguez, R., Bolotnikov, A. E., Hossain, A., Camarda, G. S., ... James, R. B. (2012). Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements. Journal of Electronic Materials, 41(3), 488-493. https://doi.org/10.1007/s11664-011-1802-y

Point defects in Pb-, Bi-, and in-doped CdZnTe detectors : Deep-level transient spectroscopy (DLTS) measurements. / Gul, R.; Keeter, K.; Rodriguez, R.; Bolotnikov, A. E.; Hossain, A.; Camarda, G. S.; Kim, Kihyun; Yang, G.; Cui, Y.; Carcelen, V.; Franc, J.; Li, Z.; James, R. B.

In: Journal of Electronic Materials, Vol. 41, No. 3, 01.03.2012, p. 488-493.

Research output: Contribution to journalArticle

Gul, R, Keeter, K, Rodriguez, R, Bolotnikov, AE, Hossain, A, Camarda, GS, Kim, K, Yang, G, Cui, Y, Carcelen, V, Franc, J, Li, Z & James, RB 2012, 'Point defects in Pb-, Bi-, and in-doped CdZnTe detectors: Deep-level transient spectroscopy (DLTS) measurements', Journal of Electronic Materials, vol. 41, no. 3, pp. 488-493. https://doi.org/10.1007/s11664-011-1802-y
Gul, R. ; Keeter, K. ; Rodriguez, R. ; Bolotnikov, A. E. ; Hossain, A. ; Camarda, G. S. ; Kim, Kihyun ; Yang, G. ; Cui, Y. ; Carcelen, V. ; Franc, J. ; Li, Z. ; James, R. B. / Point defects in Pb-, Bi-, and in-doped CdZnTe detectors : Deep-level transient spectroscopy (DLTS) measurements. In: Journal of Electronic Materials. 2012 ; Vol. 41, No. 3. pp. 488-493.
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