TY - GEN
T1 - Polar vs. nonpolar InGaN/GaN quantum heterostructures
T2 - 2010 Photonics Global Conference, PGC 2010
AU - Sari, Emre
AU - Nizamoglu, Sedat
AU - Choi, Jung Hun
AU - Lee, Seung Jae
AU - Baik, Kwang Hyeon
AU - Lee, In Hwan
AU - Baek, Jong Hyeob
AU - Hwang, Sung Min
AU - Demir, Hilmi Volkan
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2010
Y1 - 2010
N2 - We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.
AB - We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.
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U2 - 10.1109/PGC.2010.5705998
DO - 10.1109/PGC.2010.5705998
M3 - Conference contribution
AN - SCOPUS:79952333490
SN - 9781424498826
T3 - 2010 Photonics Global Conference, PGC 2010
BT - 2010 Photonics Global Conference, PGC 2010
Y2 - 14 December 2010 through 16 December 2010
ER -