Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior

Emre Sari, Sedat Nizamoglu, Jung Hun Choi, Seung Jae Lee, Kwang Hyeon Baik, In Hwan Lee, Jong Hyeob Baek, Sung Min Hwang, Hilmi Volkan Demir

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.

Original languageEnglish
Title of host publication2010 Photonics Global Conference, PGC 2010
DOIs
Publication statusPublished - 2010
Event2010 Photonics Global Conference, PGC 2010 - Orchard, Singapore
Duration: 2010 Dec 142010 Dec 16

Publication series

Name2010 Photonics Global Conference, PGC 2010

Conference

Conference2010 Photonics Global Conference, PGC 2010
CountrySingapore
CityOrchard
Period10/12/1410/12/16

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mathematical Physics
  • Atomic and Molecular Physics, and Optics

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    Sari, E., Nizamoglu, S., Choi, J. H., Lee, S. J., Baik, K. H., Lee, I. H., Baek, J. H., Hwang, S. M., & Demir, H. V. (2010). Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior. In 2010 Photonics Global Conference, PGC 2010 [5705998] (2010 Photonics Global Conference, PGC 2010). https://doi.org/10.1109/PGC.2010.5705998