Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior

Emre Sari; Sedat Nizamoglu; Jung Hun Choi; Seung Jae Lee; Kwang Hyeon Baik; In Hwan Lee; Jong Hyeob Baek; Sung Min Hwang; Hilmi Volkan Demir

doi:10.1109/PGC.2010.5705998

Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior

Emre Sari, Sedat Nizamoglu, Jung Hun Choi, Seung Jae Lee, Kwang Hyeon Baik, In Hwan Lee, Jong Hyeob Baek, Sung Min Hwang, Hilmi Volkan Demir

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.

Original language	English
Title of host publication	2010 Photonics Global Conference, PGC 2010
DOIs	https://doi.org/10.1109/PGC.2010.5705998
Publication status	Published - 2010
Externally published	Yes
Event	2010 Photonics Global Conference, PGC 2010 - Orchard, Singapore Duration: 2010 Dec 14 → 2010 Dec 16

Publication series

Name	2010 Photonics Global Conference, PGC 2010

Conference

Conference	2010 Photonics Global Conference, PGC 2010
Country	Singapore
City	Orchard
Period	10/12/14 → 10/12/16

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mathematical Physics
Atomic and Molecular Physics, and Optics

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10.1109/PGC.2010.5705998

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Sari, E., Nizamoglu, S., Choi, J. H., Lee, S. J., Baik, K. H., Lee, I. H., Baek, J. H., Hwang, S. M., & Demir, H. V. (2010). Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior. In 2010 Photonics Global Conference, PGC 2010 [5705998] (2010 Photonics Global Conference, PGC 2010). https://doi.org/10.1109/PGC.2010.5705998

Polar vs. nonpolar InGaN/GaN quantum heterostructures : Opposite quantum confined electroabsorption and carrier dynamics behavior. / Sari, Emre; Nizamoglu, Sedat; Choi, Jung Hun; Lee, Seung Jae; Baik, Kwang Hyeon; Lee, In Hwan; Baek, Jong Hyeob; Hwang, Sung Min; Demir, Hilmi Volkan.

2010 Photonics Global Conference, PGC 2010. 2010. 5705998 (2010 Photonics Global Conference, PGC 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sari, E, Nizamoglu, S, Choi, JH, Lee, SJ, Baik, KH, Lee, IH, Baek, JH, Hwang, SM & Demir, HV 2010, Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior. in 2010 Photonics Global Conference, PGC 2010., 5705998, 2010 Photonics Global Conference, PGC 2010, 2010 Photonics Global Conference, PGC 2010, Orchard, Singapore, 10/12/14. https://doi.org/10.1109/PGC.2010.5705998

Sari, Emre ; Nizamoglu, Sedat ; Choi, Jung Hun ; Lee, Seung Jae ; Baik, Kwang Hyeon ; Lee, In Hwan ; Baek, Jong Hyeob ; Hwang, Sung Min ; Demir, Hilmi Volkan. / Polar vs. nonpolar InGaN/GaN quantum heterostructures : Opposite quantum confined electroabsorption and carrier dynamics behavior. 2010 Photonics Global Conference, PGC 2010. 2010. (2010 Photonics Global Conference, PGC 2010).

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title = "Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior",

abstract = "We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.",

author = "Emre Sari and Sedat Nizamoglu and Choi, {Jung Hun} and Lee, {Seung Jae} and Baik, {Kwang Hyeon} and Lee, {In Hwan} and Baek, {Jong Hyeob} and Hwang, {Sung Min} and Demir, {Hilmi Volkan}",

year = "2010",

doi = "10.1109/PGC.2010.5705998",

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AU - Sari, Emre

AU - Nizamoglu, Sedat

AU - Choi, Jung Hun

AU - Lee, Seung Jae

AU - Baik, Kwang Hyeon

AU - Lee, In Hwan

AU - Baek, Jong Hyeob

AU - Hwang, Sung Min

AU - Demir, Hilmi Volkan

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N2 - We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.

AB - We present a study of quantum confined electroabsorption and carrier dynamics in polar c-plane and nonpolar a-plane InGaN/GaN quantum heterostructures. We demonstrate red-shifting absorption edge, due to quantum confined Stark effect, in nonpolar InGaN/GaN quantum structures in response to increased electric field, while we show the opposite effect with blue-shifting absorption spectra in polar quantum structures. Moreover, confirmed by time-resolved photoluminescence measurements, we prove that carrier lifetimes increase with increasing electric field for nonpolar structures, whereas the opposite occurs for polar ones.

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Polar vs. nonpolar InGaN/GaN quantum heterostructures: Opposite quantum confined electroabsorption and carrier dynamics behavior

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