Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes

Jae Seong Park, Jaecheon Han, Jun Seok Ha, Tae Yeon Seong

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300°C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed

Original languageEnglish
Article number172104
JournalApplied Physics Letters
Volume104
Issue number17
DOIs
Publication statusPublished - 2014 Apr 28

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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