Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes

Jae Seong Park, Jaecheon Han, Jun Seok Ha, Tae Yeon Seong

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300°C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed

Original languageEnglish
Article number172104
JournalApplied Physics Letters
Volume104
Issue number17
DOIs
Publication statusPublished - 2014 Apr 28

Fingerprint

reflectors
polarity
light emitting diodes
photoelectric emission
electrical properties
spectroscopy
annealing
x rays
atoms
electric contacts
valence
electrical resistivity
shift
air
oxygen
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes. / Park, Jae Seong; Han, Jaecheon; Ha, Jun Seok; Seong, Tae Yeon.

In: Applied Physics Letters, Vol. 104, No. 17, 172104, 28.04.2014.

Research output: Contribution to journalArticle

@article{e3ecb7dd750844d7a3767f09fe020788,
title = "Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes",
abstract = "We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300°C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed",
author = "Park, {Jae Seong} and Jaecheon Han and Ha, {Jun Seok} and Seong, {Tae Yeon}",
year = "2014",
month = "4",
day = "28",
doi = "10.1063/1.4874631",
language = "English",
volume = "104",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "17",

}

TY - JOUR

T1 - Polarity dependence of the electrical characteristics of Ag reflectors for high-power GaN-based light emitting diodes

AU - Park, Jae Seong

AU - Han, Jaecheon

AU - Ha, Jun Seok

AU - Seong, Tae Yeon

PY - 2014/4/28

Y1 - 2014/4/28

N2 - We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300°C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed

AB - We report on the polarity dependence of the electrical properties of Ag reflectors for high-power GaN-based light-emitting diodes. The (0001) c-plane samples become ohmic after annealing in air. However, the (11-22) semi-polar samples are non-ohmic after annealing, although the 300°C-annealed sample shows the lowest contact resistivity. The X-ray photoemission spectroscopy (XPS) results show that the Ga 2p core level for the c-plane samples experiences larger shift toward the valence band than that for the semi-polar samples. The XPS depth profile results show that unlike the c-plane samples, the semi-polar samples contain some amounts of oxygen at the Ag/GaN interface regions. The outdiffusion of Ga atoms is far more significant in the c-plane samples than in the semi-polar samples, whereas the outdiffusion of N atoms is relatively less significant in the c-plane samples. On the basis of the electrical and XPS results, the polarity dependence of the electrical properties is described and discussed

UR - http://www.scopus.com/inward/record.url?scp=84899800247&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899800247&partnerID=8YFLogxK

U2 - 10.1063/1.4874631

DO - 10.1063/1.4874631

M3 - Article

AN - SCOPUS:84899800247

VL - 104

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 17

M1 - 172104

ER -