Polarization and space-charge-limited current in III-nitride heterostructure nanowires

Michael A. Mastro, Hong Youl Kim, Jaehui Ahn, Blake Simpkins, Pehr Pehrsson, Jihyun Kim, Jennifer K. Hite, Charles R. Eddy

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.

Original languageEnglish
Article number5979207
Pages (from-to)3401-3406
Number of pages6
JournalIEEE Transactions on Electron Devices
Issue number10
Publication statusPublished - 2011 Oct


  • Gallium nitride
  • nanowires (NWs)
  • semiconductor nanostructures

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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