Abstract
An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.
Original language | English |
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Article number | 5979207 |
Pages (from-to) | 3401-3406 |
Number of pages | 6 |
Journal | IEEE Transactions on Electron Devices |
Volume | 58 |
Issue number | 10 |
DOIs | |
Publication status | Published - 2011 Oct |
Keywords
- Gallium nitride
- nanowires (NWs)
- semiconductor nanostructures
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering