Polarization and space-charge-limited current in III-nitride heterostructure nanowires

Michael A. Mastro; Hong Youl Kim; Jaehui Ahn; Blake Simpkins; Pehr Pehrsson; Jihyun Kim; Jennifer K. Hite; Charles R. Eddy

doi:10.1109/TED.2011.2162108

Polarization and space-charge-limited current in III-nitride heterostructure nanowires

Michael A. Mastro, Hong Youl Kim, Jaehui Ahn, Blake Simpkins, Pehr Pehrsson, Jihyun Kim, Jennifer K. Hite, Charles R. Eddy

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.

Original language	English
Article number	5979207
Pages (from-to)	3401-3406
Number of pages	6
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	10
DOIs	https://doi.org/10.1109/TED.2011.2162108
Publication status	Published - 2011 Oct

Keywords

Gallium nitride
nanowires (NWs)
semiconductor nanostructures

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2011.2162108

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Polarization and space-charge-limited current in III-nitride heterostructure nanowires. / Mastro, Michael A.; Kim, Hong Youl; Ahn, Jaehui; Simpkins, Blake; Pehrsson, Pehr; Kim, Jihyun; Hite, Jennifer K.; Eddy, Charles R.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 10, 5979207, 10.2011, p. 3401-3406.

Research output: Contribution to journal › Article › peer-review

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abstract = "An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.",

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note = "Funding Information: Manuscript received May 10, 2011; revised July 1, 2011; accepted July 6, 2011. Date of publication August 12, 2011; date of current version September 21, 2011. Research at the U.S. Naval Research Laboratory was supported by the Office of Naval Research. Research at Korea University was supported by Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-0029328. The review of this paper was arranged by Editor A. C. Seabaugh.",

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N1 - Funding Information: Manuscript received May 10, 2011; revised July 1, 2011; accepted July 6, 2011. Date of publication August 12, 2011; date of current version September 21, 2011. Research at the U.S. Naval Research Laboratory was supported by the Office of Naval Research. Research at Korea University was supported by Future-based Technology Development Program (Nano Fields) through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology under Grant 2010-0029328. The review of this paper was arranged by Editor A. C. Seabaugh.

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N2 - An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.

AB - An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.

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Polarization and space-charge-limited current in III-nitride heterostructure nanowires

Abstract

Keywords

ASJC Scopus subject areas

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