Abstract
An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.
| Original language | English |
|---|---|
| Article number | 5979207 |
| Pages (from-to) | 3401-3406 |
| Number of pages | 6 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 58 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - 2011 Oct 1 |
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Keywords
- Gallium nitride
- nanowires (NWs)
- semiconductor nanostructures
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Polarization and space-charge-limited current in III-nitride heterostructure nanowires. / Mastro, Michael A.; Kim, Hong Youl; Ahn, Jaehui; Simpkins, Blake; Pehrsson, Pehr; Kim, Ji Hyun; Hite, Jennifer K.; Eddy, Charles R.
In: IEEE Transactions on Electron Devices, Vol. 58, No. 10, 5979207, 01.10.2011, p. 3401-3406.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polarization and space-charge-limited current in III-nitride heterostructure nanowires
AU - Mastro, Michael A.
AU - Kim, Hong Youl
AU - Ahn, Jaehui
AU - Simpkins, Blake
AU - Pehrsson, Pehr
AU - Kim, Ji Hyun
AU - Hite, Jennifer K.
AU - Eddy, Charles R.
PY - 2011/10/1
Y1 - 2011/10/1
N2 - An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.
AB - An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.
KW - Gallium nitride
KW - nanowires (NWs)
KW - semiconductor nanostructures
UR - http://www.scopus.com/inward/record.url?scp=80053208197&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=80053208197&partnerID=8YFLogxK
U2 - 10.1109/TED.2011.2162108
DO - 10.1109/TED.2011.2162108
M3 - Article
AN - SCOPUS:80053208197
VL - 58
SP - 3401
EP - 3406
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
M1 - 5979207
ER -