Polarization and space-charge-limited current in III-nitride heterostructure nanowires

Michael A. Mastro, Hong Youl Kim, Jaehui Ahn, Blake Simpkins, Pehr Pehrsson, Ji Hyun Kim, Jennifer K. Hite, Charles R. Eddy

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

An undoped AlGaN/GaN nanowire (NW) demonstrated p-type conductivity solely based on the formation of hole carriers in response to the negative polarization field at the (000-1) AlGaN/GaN facet. A transistor based on this NW displayed a low-voltage transition from ohmic to space-charge-limited conduction. A numerical simulation showed that a highly asymmetric strain exists across the triangular cross section, which creates a doublet peak in the piezoelectric-induced polarization sheet charge at the (000-1) facet. Additionally, there is a strong interplay between the charge at the (000-1) AlGaN/GaN interface with depletion from the three surfaces, as well as an interaction with the opposing polarization fields at two semipolar {-110-1} facets. The charge distribution and resultant conduction regime is highly interdependent on the configuration of the multilayer structure, and it is not amenable to an analytical model.

Original languageEnglish
Article number5979207
Pages (from-to)3401-3406
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume58
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

Fingerprint

Electric space charge
Nitrides
Nanowires
Heterojunctions
Polarization
Charge distribution
Analytical models
Multilayers
Transistors
Computer simulation
Electric potential
aluminum gallium nitride

Keywords

  • Gallium nitride
  • nanowires (NWs)
  • semiconductor nanostructures

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Mastro, M. A., Kim, H. Y., Ahn, J., Simpkins, B., Pehrsson, P., Kim, J. H., ... Eddy, C. R. (2011). Polarization and space-charge-limited current in III-nitride heterostructure nanowires. IEEE Transactions on Electron Devices, 58(10), 3401-3406. [5979207]. https://doi.org/10.1109/TED.2011.2162108

Polarization and space-charge-limited current in III-nitride heterostructure nanowires. / Mastro, Michael A.; Kim, Hong Youl; Ahn, Jaehui; Simpkins, Blake; Pehrsson, Pehr; Kim, Ji Hyun; Hite, Jennifer K.; Eddy, Charles R.

In: IEEE Transactions on Electron Devices, Vol. 58, No. 10, 5979207, 01.10.2011, p. 3401-3406.

Research output: Contribution to journalArticle

Mastro, MA, Kim, HY, Ahn, J, Simpkins, B, Pehrsson, P, Kim, JH, Hite, JK & Eddy, CR 2011, 'Polarization and space-charge-limited current in III-nitride heterostructure nanowires', IEEE Transactions on Electron Devices, vol. 58, no. 10, 5979207, pp. 3401-3406. https://doi.org/10.1109/TED.2011.2162108
Mastro, Michael A. ; Kim, Hong Youl ; Ahn, Jaehui ; Simpkins, Blake ; Pehrsson, Pehr ; Kim, Ji Hyun ; Hite, Jennifer K. ; Eddy, Charles R. / Polarization and space-charge-limited current in III-nitride heterostructure nanowires. In: IEEE Transactions on Electron Devices. 2011 ; Vol. 58, No. 10. pp. 3401-3406.
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