Abstract
Control of the polarization fields is the most important parameter in designing III-nitride thin-film devices, and herein we show that the polarization fields may be equally, if not more, important in devising III-nitride nanowire devices. One common approach to produce III-nitride nanowires is via a vaporliquidsolid approach that, in general, yields nanowires with the major (growth) axis in the (11̄20) direction. The cross section of this wire is an isosceles triangle with two {1̄101} facets and one {0001} facet. In this work, we analyze the polarization fields that arise in two distinct sets of crystal planes that can manifest in this triangular nanowire geometry: (0001), (1̄10̄1), (̄110̄ 1) or (000̄1), (1̄101), (̄1101). Calculations show that the polarization field at the {0001} facet is much larger than at the two opposing {1̄101} facets, although the sign of the field at each facet has a complicated dependence on the orientation and structure of the nanowire. An undoped nanowire transistor was fabricated that displayed p-type operation based solely on polarization-induced hole carriers at the (000̄1) AlGaN/GaN interface, consistent with our field calculations.
| Original language | English |
|---|---|
| Article number | 145205 |
| Journal | Nanotechnology |
| Volume | 21 |
| Issue number | 14 |
| DOIs | |
| Publication status | Published - 2010 Mar 24 |
Fingerprint
ASJC Scopus subject areas
- Bioengineering
- Chemistry(all)
- Electrical and Electronic Engineering
- Mechanical Engineering
- Mechanics of Materials
- Materials Science(all)
Cite this
Polarization fields in III-nitride nanowire devices. / Mastro, Michael A.; Simpkins, Blake; Wang, George T.; Hite, Jennifer; Eddy, Charles R.; Kim, Hong Youl; Ahn, Jaehui; Kim, Ji Hyun.
In: Nanotechnology, Vol. 21, No. 14, 145205, 24.03.2010.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Polarization fields in III-nitride nanowire devices
AU - Mastro, Michael A.
AU - Simpkins, Blake
AU - Wang, George T.
AU - Hite, Jennifer
AU - Eddy, Charles R.
AU - Kim, Hong Youl
AU - Ahn, Jaehui
AU - Kim, Ji Hyun
PY - 2010/3/24
Y1 - 2010/3/24
N2 - Control of the polarization fields is the most important parameter in designing III-nitride thin-film devices, and herein we show that the polarization fields may be equally, if not more, important in devising III-nitride nanowire devices. One common approach to produce III-nitride nanowires is via a vaporliquidsolid approach that, in general, yields nanowires with the major (growth) axis in the (11̄20) direction. The cross section of this wire is an isosceles triangle with two {1̄101} facets and one {0001} facet. In this work, we analyze the polarization fields that arise in two distinct sets of crystal planes that can manifest in this triangular nanowire geometry: (0001), (1̄10̄1), (̄110̄ 1) or (000̄1), (1̄101), (̄1101). Calculations show that the polarization field at the {0001} facet is much larger than at the two opposing {1̄101} facets, although the sign of the field at each facet has a complicated dependence on the orientation and structure of the nanowire. An undoped nanowire transistor was fabricated that displayed p-type operation based solely on polarization-induced hole carriers at the (000̄1) AlGaN/GaN interface, consistent with our field calculations.
AB - Control of the polarization fields is the most important parameter in designing III-nitride thin-film devices, and herein we show that the polarization fields may be equally, if not more, important in devising III-nitride nanowire devices. One common approach to produce III-nitride nanowires is via a vaporliquidsolid approach that, in general, yields nanowires with the major (growth) axis in the (11̄20) direction. The cross section of this wire is an isosceles triangle with two {1̄101} facets and one {0001} facet. In this work, we analyze the polarization fields that arise in two distinct sets of crystal planes that can manifest in this triangular nanowire geometry: (0001), (1̄10̄1), (̄110̄ 1) or (000̄1), (1̄101), (̄1101). Calculations show that the polarization field at the {0001} facet is much larger than at the two opposing {1̄101} facets, although the sign of the field at each facet has a complicated dependence on the orientation and structure of the nanowire. An undoped nanowire transistor was fabricated that displayed p-type operation based solely on polarization-induced hole carriers at the (000̄1) AlGaN/GaN interface, consistent with our field calculations.
UR - http://www.scopus.com/inward/record.url?scp=77949545235&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77949545235&partnerID=8YFLogxK
U2 - 10.1088/0957-4484/21/14/145205
DO - 10.1088/0957-4484/21/14/145205
M3 - Article
C2 - 20220226
AN - SCOPUS:77949545235
VL - 21
JO - Nanotechnology
JF - Nanotechnology
SN - 0957-4484
IS - 14
M1 - 145205
ER -