Polarization fields in III-nitride nanowire devices

Michael A. Mastro, Blake Simpkins, George T. Wang, Jennifer Hite, Charles R. Eddy, Hong Youl Kim, Jaehui Ahn, Ji Hyun Kim

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

Control of the polarization fields is the most important parameter in designing III-nitride thin-film devices, and herein we show that the polarization fields may be equally, if not more, important in devising III-nitride nanowire devices. One common approach to produce III-nitride nanowires is via a vaporliquidsolid approach that, in general, yields nanowires with the major (growth) axis in the (11̄20) direction. The cross section of this wire is an isosceles triangle with two {1̄101} facets and one {0001} facet. In this work, we analyze the polarization fields that arise in two distinct sets of crystal planes that can manifest in this triangular nanowire geometry: (0001), (1̄10̄1), (̄110̄ 1) or (000̄1), (1̄101), (̄1101). Calculations show that the polarization field at the {0001} facet is much larger than at the two opposing {1̄101} facets, although the sign of the field at each facet has a complicated dependence on the orientation and structure of the nanowire. An undoped nanowire transistor was fabricated that displayed p-type operation based solely on polarization-induced hole carriers at the (000̄1) AlGaN/GaN interface, consistent with our field calculations.

Original languageEnglish
Article number145205
JournalNanotechnology
Volume21
Issue number14
DOIs
Publication statusPublished - 2010 Mar 24

Fingerprint

Nanowires
Nitrides
Polarization
Equipment and Supplies
Thin film devices
Transistors
Wire
Crystals
Geometry
Growth

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Mechanics of Materials
  • Materials Science(all)

Cite this

Mastro, M. A., Simpkins, B., Wang, G. T., Hite, J., Eddy, C. R., Kim, H. Y., ... Kim, J. H. (2010). Polarization fields in III-nitride nanowire devices. Nanotechnology, 21(14), [145205]. https://doi.org/10.1088/0957-4484/21/14/145205

Polarization fields in III-nitride nanowire devices. / Mastro, Michael A.; Simpkins, Blake; Wang, George T.; Hite, Jennifer; Eddy, Charles R.; Kim, Hong Youl; Ahn, Jaehui; Kim, Ji Hyun.

In: Nanotechnology, Vol. 21, No. 14, 145205, 24.03.2010.

Research output: Contribution to journalArticle

Mastro, MA, Simpkins, B, Wang, GT, Hite, J, Eddy, CR, Kim, HY, Ahn, J & Kim, JH 2010, 'Polarization fields in III-nitride nanowire devices', Nanotechnology, vol. 21, no. 14, 145205. https://doi.org/10.1088/0957-4484/21/14/145205
Mastro MA, Simpkins B, Wang GT, Hite J, Eddy CR, Kim HY et al. Polarization fields in III-nitride nanowire devices. Nanotechnology. 2010 Mar 24;21(14). 145205. https://doi.org/10.1088/0957-4484/21/14/145205
Mastro, Michael A. ; Simpkins, Blake ; Wang, George T. ; Hite, Jennifer ; Eddy, Charles R. ; Kim, Hong Youl ; Ahn, Jaehui ; Kim, Ji Hyun. / Polarization fields in III-nitride nanowire devices. In: Nanotechnology. 2010 ; Vol. 21, No. 14.
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