Poly-Si TFTs with bottom-gate structure using excimer laser crystallisation for AMOLED displays

K. Oh, S. Yang, J. Lee, K. Park, Man Young Sung

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An n-type polycrystalline silicon thin-film transistor (poly-Si TFT) with a bottom-gate structure using excimer laser annealing (ELA) for active matrix organic light-emitting diode displays is proposed. A problem with bottom-gate poly-Si TFTs (BGPs) using ELA, namely, the disconnection of poly-Si at the boundary of the gate metal during the ELA crystallisation, was solved by developing a novel process to control the slope of the gate metal. We realised ELA BGPs with pure-Mo gate having a thickness of more than 150 nm. The BGPs have better breakdown voltage characteristics compared with the conventional top-gate poly-Si TFTs because of its flat channel region and homogeneous electric field distribution in the gate insulator.

Original languageEnglish
Pages (from-to)2030-2032
Number of pages3
JournalElectronics Letters
Volume51
Issue number24
DOIs
Publication statusPublished - 2015 Nov 19

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Excimer lasers
Polysilicon
Crystallization
Display devices
Annealing
Organic light emitting diodes (OLED)
Thin film transistors
Metals
Electric breakdown
Electric fields

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Poly-Si TFTs with bottom-gate structure using excimer laser crystallisation for AMOLED displays. / Oh, K.; Yang, S.; Lee, J.; Park, K.; Sung, Man Young.

In: Electronics Letters, Vol. 51, No. 24, 19.11.2015, p. 2030-2032.

Research output: Contribution to journalArticle

Oh, K. ; Yang, S. ; Lee, J. ; Park, K. ; Sung, Man Young. / Poly-Si TFTs with bottom-gate structure using excimer laser crystallisation for AMOLED displays. In: Electronics Letters. 2015 ; Vol. 51, No. 24. pp. 2030-2032.
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