Polycrystalline silicon wafer fabricated by direct growth from liquid silicon

Seung Jin Ko, Bo Yun Jang, Joon Soo Kim, Young Soo Ahn, Sahn Nahm

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

A polycrystalline silicon (Si) wafer was grown directly from liquid Si. There are three requirements to achieve a Si wafer applicable for solar cells. One is that the Si wafer must have a sharply edgedefined quadrangular shape with a good surface morphology. The others are that the Si wafer must have a good microstructure and low-end impurity concentrations. A Si wafer with size of 50 × 50 mm was successively grown using a new horizontal growth method. The thickness of the as-grown wafer was approximately 375 ± 50 μm and that of a wafer with both sides polished was about 300 μm. Using Ar gas blowing, the grown wafer was quenched. In addition, the liquid Si residue on the surface of the wafer was effectively removed to enhance the surface morphology. The maximum growth velocity to continuously grow the Si wafer was 1280 cm/min. From investigations of the microstructures, randomly shaped grains with an average size of 50.22 μm were grown vertically from the bottom to the top of the wafer. This columnar grain structure should be beneficial for solar-cell applications because the horizontal grain boundaries are major recombination sites for generated charge carriers. However, defects, such as dislocations, twins, pores and impurities, such as SiC and carbon particles, were detected. There were also contamination with metal impurities, such as Al, Ca, Ni, and Ti at several ppmw, and a relatively high concentration of oxygen. The direct growth process for a Si wafer used in this study could be a good candidate for a new technology to fabricate Si wafers for use in solar cells due to the good shape properties and the high growth velocity. However, the microstructure must be improved, and further impurity control is needed.

Original languageEnglish
Pages (from-to)97-102
Number of pages6
JournalJournal of the Korean Physical Society
Volume57
Issue number1
DOIs
Publication statusPublished - 2010 Jul 1

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wafers
silicon
liquids
impurities
solar cells
microstructure
blowing
charge carriers
contamination
grain boundaries
porosity
requirements
carbon
defects
oxygen
gases
metals

Keywords

  • Direct growth
  • Microstructure
  • Polycrystalline
  • Shape
  • Silicon
  • Solar cell

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Polycrystalline silicon wafer fabricated by direct growth from liquid silicon. / Ko, Seung Jin; Jang, Bo Yun; Kim, Joon Soo; Ahn, Young Soo; Nahm, Sahn.

In: Journal of the Korean Physical Society, Vol. 57, No. 1, 01.07.2010, p. 97-102.

Research output: Contribution to journalArticle

Ko, Seung Jin ; Jang, Bo Yun ; Kim, Joon Soo ; Ahn, Young Soo ; Nahm, Sahn. / Polycrystalline silicon wafer fabricated by direct growth from liquid silicon. In: Journal of the Korean Physical Society. 2010 ; Vol. 57, No. 1. pp. 97-102.
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