Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Donghwan Kim, Scott Pozder, Yuming Zhu, John U. Trefny

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density J dep = 0.33 - 0.40 mA/cm 2, the anode current ratio R Te/Cd = 2.7, and the deposition potential V dep = -600 mV against a Ag/AgCl reference electrode. CdCl 2 treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl 2-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage V oc up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm 2) have been produced in this work.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages334-337
Number of pages4
Volume1
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: 1994 Dec 51994 Dec 9

Other

OtherProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
CityWaikoloa, HI, USA
Period94/12/594/12/9

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ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Kim, D., Pozder, S., Zhu, Y., & Trefny, J. U. (1994). Polycrystalline thin film CdTe solar cells fabricated by electrodeposition. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 1, pp. 334-337). IEEE.