Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Donghwan Kim; Scott Pozder; Yuming Zhu; John U. Trefny

Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Donghwan Kim, Scott Pozder, Yuming Zhu, John U. Trefny

Research output: Contribution to journal › Conference article › peer-review

Abstract

Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density J_dep = 0.33 - 0.40 mA/cm², the anode current ratio R_Te/Cd = 2.7, and the deposition potential V_dep = -600 mV against a Ag/AgCl reference electrode. CdCl₂ treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl₂-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage V_oc up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm²) have been produced in this work.

Original language	English
Pages (from-to)	334-337
Number of pages	4
Journal	Conference Record of the IEEE Photovoltaic Specialists Conference
Volume	1
Publication status	Published - 1994
Externally published	Yes
Event	Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA Duration: 1994 Dec 5 → 1994 Dec 9

ASJC Scopus subject areas

Control and Systems Engineering
Industrial and Manufacturing Engineering
Electrical and Electronic Engineering

Cite this

@article{4199fef8e7124765ae94e1b88d2ed633,

title = "Polycrystalline thin film CdTe solar cells fabricated by electrodeposition",

abstract = "Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density Jdep = 0.33 - 0.40 mA/cm2, the anode current ratio RTe/Cd = 2.7, and the deposition potential Vdep = -600 mV against a Ag/AgCl reference electrode. CdCl2 treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl2-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage Voc up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm2) have been produced in this work.",

author = "Donghwan Kim and Scott Pozder and Yuming Zhu and Trefny, {John U.}",

year = "1994",

language = "English",

volume = "1",

pages = "334--337",

journal = "Conference Record of the IEEE Photovoltaic Specialists Conference",

issn = "0160-8371",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) ; Conference date: 05-12-1994 Through 09-12-1994",

}

TY - JOUR

T1 - Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

AU - Kim, Donghwan

AU - Pozder, Scott

AU - Zhu, Yuming

AU - Trefny, John U.

PY - 1994

Y1 - 1994

N2 - Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density Jdep = 0.33 - 0.40 mA/cm2, the anode current ratio RTe/Cd = 2.7, and the deposition potential Vdep = -600 mV against a Ag/AgCl reference electrode. CdCl2 treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl2-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage Voc up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm2) have been produced in this work.

AB - Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density Jdep = 0.33 - 0.40 mA/cm2, the anode current ratio RTe/Cd = 2.7, and the deposition potential Vdep = -600 mV against a Ag/AgCl reference electrode. CdCl2 treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl2-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage Voc up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm2) have been produced in this work.

UR - http://www.scopus.com/inward/record.url?scp=0028702290&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028702290&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028702290

SN - 0160-8371

VL - 1

SP - 334

EP - 337

JO - Conference Record of the IEEE Photovoltaic Specialists Conference

JF - Conference Record of the IEEE Photovoltaic Specialists Conference

T2 - Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)

Y2 - 5 December 1994 through 9 December 1994

ER -

Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Abstract

ASJC Scopus subject areas

Other files and links

Fingerprint

Cite this