Polycrystalline thin film CdTe solar cells fabricated by electrodeposition

Donghwan Kim, Scott Pozder, Yuming Zhu, John U. Trefny

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density J dep = 0.33 - 0.40 mA/cm 2, the anode current ratio R Te/Cd = 2.7, and the deposition potential V dep = -600 mV against a Ag/AgCl reference electrode. CdCl 2 treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl 2-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage V oc up to 0.78 V. 11.0% CdS/CdTe/Au dot cells (0.033 cm 2) have been produced in this work.

Original languageEnglish
Title of host publicationConference Record of the IEEE Photovoltaic Specialists Conference
Editors Anon
PublisherIEEE
Pages334-337
Number of pages4
Volume1
Publication statusPublished - 1994
Externally publishedYes
EventProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2) - Waikoloa, HI, USA
Duration: 1994 Dec 51994 Dec 9

Other

OtherProceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2)
CityWaikoloa, HI, USA
Period94/12/594/12/9

Fingerprint

Electrodeposition
electrodeposition
solar cells
thin films
homojunctions
Induced currents
Open circuit voltage
open circuit voltage
Electron beams
Solar cells
Anodes
anodes
Current density
electron beams
Annealing
current density
Fabrication
Electrodes
fabrication
annealing

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Condensed Matter Physics

Cite this

Kim, D., Pozder, S., Zhu, Y., & Trefny, J. U. (1994). Polycrystalline thin film CdTe solar cells fabricated by electrodeposition. In Anon (Ed.), Conference Record of the IEEE Photovoltaic Specialists Conference (Vol. 1, pp. 334-337). IEEE.

Polycrystalline thin film CdTe solar cells fabricated by electrodeposition. / Kim, Donghwan; Pozder, Scott; Zhu, Yuming; Trefny, John U.

Conference Record of the IEEE Photovoltaic Specialists Conference. ed. / Anon. Vol. 1 IEEE, 1994. p. 334-337.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kim, D, Pozder, S, Zhu, Y & Trefny, JU 1994, Polycrystalline thin film CdTe solar cells fabricated by electrodeposition. in Anon (ed.), Conference Record of the IEEE Photovoltaic Specialists Conference. vol. 1, IEEE, pp. 334-337, Proceedings of the 24th IEEE Photovoltaic Specialists Conference. Part 2 (of 2), Waikoloa, HI, USA, 94/12/5.
Kim D, Pozder S, Zhu Y, Trefny JU. Polycrystalline thin film CdTe solar cells fabricated by electrodeposition. In Anon, editor, Conference Record of the IEEE Photovoltaic Specialists Conference. Vol. 1. IEEE. 1994. p. 334-337
Kim, Donghwan ; Pozder, Scott ; Zhu, Yuming ; Trefny, John U. / Polycrystalline thin film CdTe solar cells fabricated by electrodeposition. Conference Record of the IEEE Photovoltaic Specialists Conference. editor / Anon. Vol. 1 IEEE, 1994. pp. 334-337
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abstract = "Several issues regarding the fabrication of CdTe solar cells by electrodeposition have been investigated. The CdTe deposition parameters were optimized as follows: the deposition current density J dep = 0.33 - 0.40 mA/cm 2, the anode current ratio R Te/Cd = 2.7, and the deposition potential V dep = -600 mV against a Ag/AgCl reference electrode. CdCl 2 treatment and subsequent annealing made a significant change in the composition: the film became Cd-rich throughout its whole thickness, and the concentrations of both Cd and Cl increased near the surface. Electron beam-induced current (EBIC) data showed a peak inside the CdTe layer suggesting a buried homojunction. Use of CdS double layers composed of a CdCl 2-treated, annealed CdS underlayer covered with an as-deposited CdS overlayer resulted in a significant increase in open-circuit voltage V oc up to 0.78 V. 11.0{\%} CdS/CdTe/Au dot cells (0.033 cm 2) have been produced in this work.",
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