Polydiacetylene-based selective NH 3 gas sensor using Sc 2O 3/GaN structures

G. S. Lee, C. Lee, H. Choi, Dong June Ahn, Ji Hyun Kim, B. P. Gila, C. R. Abernathy, S. J. Pearton, F. Ren

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Abstract

PDA(Polydiacetylene)-supramolecules were successfully immobilized on the surface of Sc 2O 3/GaN/Sap-phire structures for use as selective NH 3 gas sensors. The Sc 2O 3 was epitaxially grown on GaN/Sapphire templates by molecular beam epitaxy (MBE) to replace the non-uniform native Ga 2O 3. The GaN-based PDA gas sensors showed excellent selectivity for ammonia detection after the end-functional group was modified to respond to this specific gas species.

Original languageEnglish
Pages (from-to)3556-3561
Number of pages6
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number10
DOIs
Publication statusPublished - 2007 Oct 1

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces, Coatings and Films

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