Polymeric mold soft-patterned metal oxide field-effect transistors: Critical factors determining device performance

Seong Jip Kim, Aryeon Kim, Yejin Jo, Jun Young Yoon, Sun Sook Lee, Youngmin Choi, Jongchan Won, Sahn Nahm, Kwang Suk Jang, Yun Ho Kim, Sunho Jeong

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The chemical structures of either spin-cast or soft-patterned ZTO semiconductors were compared and the device performance of thin-film transistors (TFTs) employing two kinds of zinc tin oxide (ZTO) channel layers was investigated in order to explore the factors limiting device performance in soluble oxide TFTs fabricated by polymeric mold-based patterning methodologies Through the comparative analysis of both ZTO layers, it was revealed that less transformed chemical structures evolved in soft-patterned ZTO devices, with significantly degraded device performance, regardless of characteristic synthetic strategies. This variation in the performance was caused by kinetics-involved, different chemical reaction pathways due to gradual solvent evaporation in structurally confined polymeric molds, which inevitably occurs in mold-based soft-patterning techniques The results also suggest the meaningful fact that controlling the solvent evaporation involved trigger of the sol-gel reactions is one of the most significant factors for facilitating high performance devices when using polymeric mold-based soft-patterning processes, unlike the general spin-casting method and jet based printing techniques.

Original languageEnglish
Pages (from-to)8486-8491
Number of pages6
JournalJournal of Materials Chemistry C
Volume2
Issue number40
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Field effect transistors
Zinc oxide
Tin oxides
Oxides
Metals
Thin film transistors
Evaporation
Molds
Oxide films
Sol-gels
Printing
Chemical reactions
Casting
Kinetics
stannic oxide

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Chemistry

Cite this

Polymeric mold soft-patterned metal oxide field-effect transistors : Critical factors determining device performance. / Kim, Seong Jip; Kim, Aryeon; Jo, Yejin; Yoon, Jun Young; Lee, Sun Sook; Choi, Youngmin; Won, Jongchan; Nahm, Sahn; Jang, Kwang Suk; Kim, Yun Ho; Jeong, Sunho.

In: Journal of Materials Chemistry C, Vol. 2, No. 40, 01.01.2014, p. 8486-8491.

Research output: Contribution to journalArticle

Kim, SJ, Kim, A, Jo, Y, Yoon, JY, Lee, SS, Choi, Y, Won, J, Nahm, S, Jang, KS, Kim, YH & Jeong, S 2014, 'Polymeric mold soft-patterned metal oxide field-effect transistors: Critical factors determining device performance', Journal of Materials Chemistry C, vol. 2, no. 40, pp. 8486-8491. https://doi.org/10.1039/c4tc01530d
Kim, Seong Jip ; Kim, Aryeon ; Jo, Yejin ; Yoon, Jun Young ; Lee, Sun Sook ; Choi, Youngmin ; Won, Jongchan ; Nahm, Sahn ; Jang, Kwang Suk ; Kim, Yun Ho ; Jeong, Sunho. / Polymeric mold soft-patterned metal oxide field-effect transistors : Critical factors determining device performance. In: Journal of Materials Chemistry C. 2014 ; Vol. 2, No. 40. pp. 8486-8491.
@article{81f2ee4af21442f6876dbfd5071e9b13,
title = "Polymeric mold soft-patterned metal oxide field-effect transistors: Critical factors determining device performance",
abstract = "The chemical structures of either spin-cast or soft-patterned ZTO semiconductors were compared and the device performance of thin-film transistors (TFTs) employing two kinds of zinc tin oxide (ZTO) channel layers was investigated in order to explore the factors limiting device performance in soluble oxide TFTs fabricated by polymeric mold-based patterning methodologies Through the comparative analysis of both ZTO layers, it was revealed that less transformed chemical structures evolved in soft-patterned ZTO devices, with significantly degraded device performance, regardless of characteristic synthetic strategies. This variation in the performance was caused by kinetics-involved, different chemical reaction pathways due to gradual solvent evaporation in structurally confined polymeric molds, which inevitably occurs in mold-based soft-patterning techniques The results also suggest the meaningful fact that controlling the solvent evaporation involved trigger of the sol-gel reactions is one of the most significant factors for facilitating high performance devices when using polymeric mold-based soft-patterning processes, unlike the general spin-casting method and jet based printing techniques.",
author = "Kim, {Seong Jip} and Aryeon Kim and Yejin Jo and Yoon, {Jun Young} and Lee, {Sun Sook} and Youngmin Choi and Jongchan Won and Sahn Nahm and Jang, {Kwang Suk} and Kim, {Yun Ho} and Sunho Jeong",
year = "2014",
month = "1",
day = "1",
doi = "10.1039/c4tc01530d",
language = "English",
volume = "2",
pages = "8486--8491",
journal = "Journal of Materials Chemistry C",
issn = "2050-7526",
publisher = "Royal Society of Chemistry",
number = "40",

}

TY - JOUR

T1 - Polymeric mold soft-patterned metal oxide field-effect transistors

T2 - Critical factors determining device performance

AU - Kim, Seong Jip

AU - Kim, Aryeon

AU - Jo, Yejin

AU - Yoon, Jun Young

AU - Lee, Sun Sook

AU - Choi, Youngmin

AU - Won, Jongchan

AU - Nahm, Sahn

AU - Jang, Kwang Suk

AU - Kim, Yun Ho

AU - Jeong, Sunho

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The chemical structures of either spin-cast or soft-patterned ZTO semiconductors were compared and the device performance of thin-film transistors (TFTs) employing two kinds of zinc tin oxide (ZTO) channel layers was investigated in order to explore the factors limiting device performance in soluble oxide TFTs fabricated by polymeric mold-based patterning methodologies Through the comparative analysis of both ZTO layers, it was revealed that less transformed chemical structures evolved in soft-patterned ZTO devices, with significantly degraded device performance, regardless of characteristic synthetic strategies. This variation in the performance was caused by kinetics-involved, different chemical reaction pathways due to gradual solvent evaporation in structurally confined polymeric molds, which inevitably occurs in mold-based soft-patterning techniques The results also suggest the meaningful fact that controlling the solvent evaporation involved trigger of the sol-gel reactions is one of the most significant factors for facilitating high performance devices when using polymeric mold-based soft-patterning processes, unlike the general spin-casting method and jet based printing techniques.

AB - The chemical structures of either spin-cast or soft-patterned ZTO semiconductors were compared and the device performance of thin-film transistors (TFTs) employing two kinds of zinc tin oxide (ZTO) channel layers was investigated in order to explore the factors limiting device performance in soluble oxide TFTs fabricated by polymeric mold-based patterning methodologies Through the comparative analysis of both ZTO layers, it was revealed that less transformed chemical structures evolved in soft-patterned ZTO devices, with significantly degraded device performance, regardless of characteristic synthetic strategies. This variation in the performance was caused by kinetics-involved, different chemical reaction pathways due to gradual solvent evaporation in structurally confined polymeric molds, which inevitably occurs in mold-based soft-patterning techniques The results also suggest the meaningful fact that controlling the solvent evaporation involved trigger of the sol-gel reactions is one of the most significant factors for facilitating high performance devices when using polymeric mold-based soft-patterning processes, unlike the general spin-casting method and jet based printing techniques.

UR - http://www.scopus.com/inward/record.url?scp=84907486947&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907486947&partnerID=8YFLogxK

U2 - 10.1039/c4tc01530d

DO - 10.1039/c4tc01530d

M3 - Article

AN - SCOPUS:84907486947

VL - 2

SP - 8486

EP - 8491

JO - Journal of Materials Chemistry C

JF - Journal of Materials Chemistry C

SN - 2050-7526

IS - 40

ER -