Position-controlled selective growth of ZnO nanorods on si substrates using facet-controlled GaN micropatterns

Young Joon Hong, Sung Jin An, Hye Seong Jung, Chul-Ho Lee, Gyu Chul Yi

Research output: Contribution to journalArticle

47 Citations (Scopus)

Abstract

Zinc oxide nanorod arrays were selectively grown on Si substrates using facet-controlled GaN micropatterns with highly anisotropic surface energies. Electron microscopy and high resolution SR-XRD revealed that single crystal ZnO nanorods were heteroepitaxially grown only on a top surface of GaN with uniform distributions in their diameters and lengths. These selectively grown ZnO nanorods exhibit excellent photoluminescent characteristics with a free exciton photoluminescence (PL) peak as well as well-resolved bound exciton PL peaks. The accurate position-control of the nanorods provides an easy way to integrate vertical nanorods for many electronic and optoelectronic integrated circuit applications.

Original languageEnglish
Pages (from-to)4416-4419
Number of pages4
JournalAdvanced Materials
Volume19
Issue number24
DOIs
Publication statusPublished - 2007 Dec 17
Externally publishedYes

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Nanorods
Substrates
Excitons
Photoluminescence
Zinc Oxide
Integrated optoelectronics
Position control
Zinc oxide
Interfacial energy
Electron microscopy
Single crystals
LDS 751

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Position-controlled selective growth of ZnO nanorods on si substrates using facet-controlled GaN micropatterns. / Hong, Young Joon; An, Sung Jin; Jung, Hye Seong; Lee, Chul-Ho; Yi, Gyu Chul.

In: Advanced Materials, Vol. 19, No. 24, 17.12.2007, p. 4416-4419.

Research output: Contribution to journalArticle

Hong, Young Joon ; An, Sung Jin ; Jung, Hye Seong ; Lee, Chul-Ho ; Yi, Gyu Chul. / Position-controlled selective growth of ZnO nanorods on si substrates using facet-controlled GaN micropatterns. In: Advanced Materials. 2007 ; Vol. 19, No. 24. pp. 4416-4419.
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