Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET

Byoung Hak Hong, Young Chai Jung, Jae Sung Rieh, Sung Woo Hwang, Keun Hwi Cho, K. H. Yeo, S. D. Suk, Y. Y. Yeoh, M. Li, Dong Won Kim, Donggun Park, Kyung Seok Oh, Won Seong Lee

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Temperature-dependent electrical transport measurements of cylindrical shaped gate-all-around silicon nanowire p-channel MOSFET were performed. At 4.2 K, they show current oscillations, which can be analyzed by single hole tunneling originated from nanowire quantum dots. In addition to this single hole tunneling, one device exhibited strong current peaks, surviving even at room temperature. The separations between these current peaks corresponded to the energy of 25 and 26 meV. These values were consistent with the sum of the bound-state energy spacing and the charging energy of a single boron atom. The radius calculated from the obtained single-atom charging energy was also comparable to the light-hole Bohr radius.

Original languageEnglish
Article number4907082
Pages (from-to)713-717
Number of pages5
JournalIEEE Transactions on Nanotechnology
Volume8
Issue number6
DOIs
Publication statusPublished - 2009 Nov

Keywords

  • Gate-all-around (GAA)
  • Silicon nanowire FET (SNWFET)
  • Single-acceptor atom
  • Temperature dependence

ASJC Scopus subject areas

  • Computer Science Applications
  • Electrical and Electronic Engineering

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  • Cite this

    Hong, B. H., Jung, Y. C., Rieh, J. S., Hwang, S. W., Cho, K. H., Yeo, K. H., Suk, S. D., Yeoh, Y. Y., Li, M., Kim, D. W., Park, D., Oh, K. S., & Lee, W. S. (2009). Possibility of transport through a single acceptor in a gate-all-around silicon nanowire PMOSFET. IEEE Transactions on Nanotechnology, 8(6), 713-717. [4907082]. https://doi.org/10.1109/TNANO.2009.2021844