Possible degradation mechanism in ZnS

Mn alternating current thin-film electroluminescent display

Yun-Hi Lee, In Jae Chung, Myung Hwan Oh

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.

Original languageEnglish
Pages (from-to)962-964
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number9
DOIs
Publication statusPublished - 1991 Dec 1
Externally publishedYes

Fingerprint

alternating current
insulators
degradation
ITO (semiconductors)
Auger spectroscopy
electron spectroscopy
interlayers
brightness
thin films
sulfides
zinc
electric potential
profiles

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Possible degradation mechanism in ZnS : Mn alternating current thin-film electroluminescent display. / Lee, Yun-Hi; Chung, In Jae; Oh, Myung Hwan.

In: Applied Physics Letters, Vol. 58, No. 9, 01.12.1991, p. 962-964.

Research output: Contribution to journalArticle

@article{d237519a07654bbeab84a486ea4edcaf,
title = "Possible degradation mechanism in ZnS: Mn alternating current thin-film electroluminescent display",
abstract = "To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.",
author = "Yun-Hi Lee and Chung, {In Jae} and Oh, {Myung Hwan}",
year = "1991",
month = "12",
day = "1",
doi = "10.1063/1.104456",
language = "English",
volume = "58",
pages = "962--964",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "9",

}

TY - JOUR

T1 - Possible degradation mechanism in ZnS

T2 - Mn alternating current thin-film electroluminescent display

AU - Lee, Yun-Hi

AU - Chung, In Jae

AU - Oh, Myung Hwan

PY - 1991/12/1

Y1 - 1991/12/1

N2 - To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.

AB - To study origins of alternating current thin-film electroluminescent display (AC-TFELD) degradation phenomena, we have fabricated two different types of AC-TFELD with multilayered insulators. For an accelerated aging, high-frequency voltages were applied and brightness versus operating time characteristics were measured. Surface morphology (SEM), Auger electron spectroscopy (AES) in-depth profiles, and AES spectra were examined for the aged devices with and without Si3N4 interlayers. From the obtained results, we proposed that the formation of zinc-oxy-sulfides in ZnS:Mn-insulator at the ITO side may play a significant role in the aging phenomena and degradation of brightness (B)-operating time (T) characteristics for our devices. Therefore, we suggest that the dielectric interlayer of stable stochiometry must be inserted in ZnS:Mn-insulator at the In2O 3-SnO2(ITO) side to improve the aging characteristics.

UR - http://www.scopus.com/inward/record.url?scp=0004116280&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0004116280&partnerID=8YFLogxK

U2 - 10.1063/1.104456

DO - 10.1063/1.104456

M3 - Article

VL - 58

SP - 962

EP - 964

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 9

ER -