The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.
ASJC Scopus subject areas
- Physics and Astronomy(all)