Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices

S. J. Chung, Sang Hoon Lee, I. W. Park, X. Liu, J. K. Furdyna

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The effects of free carriers in the nonmagnetic spacer layer on the magnetic properties of GaMnAs/GaAs ferromagnetic semiconductor superlattices (SL) were investigated. In the SL system, one of the SL structures was doped with Be in the GaAs spacer layers, and the GaAs layer of the other SL were undoped in order to investigate the effects of carriers. The remanent magnetization of the two SL were calculated in order to analyze the robustness of the SL systems. The hardness of the magnetization in the SL with Be-doped GaAs layer was found to be related to interlayer coupling which was introduced by doping of the nonmagnetic layers.

Original languageEnglish
Pages (from-to)7402-7404
Number of pages3
JournalJournal of Applied Physics
Volume95
Issue number11 II
DOIs
Publication statusPublished - 2004 Jun 1

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superlattices
interlayers
indication
spacers
magnetization
hardness
magnetic properties

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices. / Chung, S. J.; Lee, Sang Hoon; Park, I. W.; Liu, X.; Furdyna, J. K.

In: Journal of Applied Physics, Vol. 95, No. 11 II, 01.06.2004, p. 7402-7404.

Research output: Contribution to journalArticle

Chung, S. J. ; Lee, Sang Hoon ; Park, I. W. ; Liu, X. ; Furdyna, J. K. / Possible indication of interlayer exchange coupling in GaMnAs/GaAs ferromagnetic semiconductor superlattices. In: Journal of Applied Physics. 2004 ; Vol. 95, No. 11 II. pp. 7402-7404.
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