Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

June O. Song, Hyun Gi Hong, Joon Woo Jeon, Jung Inn Sohn, Ja Soon Jang, Tae Yeon Seong

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

Original languageEnglish
Pages (from-to)H36-H38
JournalElectrochemical and Solid-State Letters
Volume11
Issue number2
DOIs
Publication statusPublished - 2008

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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