Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes

June O. Song, Hyun G. Hong, Joon W. Jeon, Jung I. Sohn, Ja Soon Jang, Tae Yeon Seong

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

We have investigated the Ag (1 nm)indium tin oxide (ITO) (200 nm) contacts by scanning transmission electron microscopy (STEM), Auger electron spectroscopy (AES), and X-ray photoemission spectroscopy (XPS) to understand its ohmic mechanism. The Ag/ITO contacts exhibit ohmic behaviors, when annealed at 400-600°C. The effective Schottky barrier heights depend on the annealing temperatures. STEM and AES results reveal the formation of Ag nanodots (5-35 nm across) and Ga-Ag solid solution. Based on the STEM, AES, and XPS results, the ohmic contact formation is described in terms of the formation of the Ga-Ag solid solution and the inhomogeneous interfaces with nanodots.

Original languageEnglish
JournalElectrochemical and Solid-State Letters
Volume11
Issue number2
DOIs
Publication statusPublished - 2008 Jan 4

Fingerprint

Auger electron spectroscopy
Tin oxides
indium oxides
Indium
tin oxides
Auger spectroscopy
Light emitting diodes
electron spectroscopy
Luminance
brightness
light emitting diodes
Ohmic contacts
Photoelectron spectroscopy
X ray spectroscopy
Transmission electron microscopy
transmission electron microscopy
Scanning electron microscopy
scanning electron microscopy
Solid solutions
solid solutions

ASJC Scopus subject areas

  • Electrochemistry
  • Materials Science(all)

Cite this

Possible ohmic mechanisms of Ag/indium tin oxide p-type contacts for high-brightness GaN -Based light emitting diodes. / Song, June O.; Hong, Hyun G.; Jeon, Joon W.; Sohn, Jung I.; Jang, Ja Soon; Seong, Tae Yeon.

In: Electrochemical and Solid-State Letters, Vol. 11, No. 2, 04.01.2008.

Research output: Contribution to journalArticle

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AU - Seong, Tae Yeon

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