Abstract
The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.
| Original language | English |
|---|---|
| Pages (from-to) | 5810-5812 |
| Number of pages | 3 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - 2010 Aug 2 |
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Keywords
- Annealing
- Non-polar GaN
- Schottky barrier height
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Metals and Alloys
- Surfaces, Coatings and Films
- Surfaces and Interfaces
Cite this
Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN. / Jung, Younghun; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.
In: Thin Solid Films, Vol. 518, No. 20, 02.08.2010, p. 5810-5812.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN
AU - Jung, Younghun
AU - Mastro, Michael A.
AU - Hite, Jennifer
AU - Eddy, Charles R.
AU - Kim, Ji Hyun
PY - 2010/8/2
Y1 - 2010/8/2
N2 - The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.
AB - The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.
KW - Annealing
KW - Non-polar GaN
KW - Schottky barrier height
UR - http://www.scopus.com/inward/record.url?scp=77955413914&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955413914&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2010.05.113
DO - 10.1016/j.tsf.2010.05.113
M3 - Article
AN - SCOPUS:77955413914
VL - 518
SP - 5810
EP - 5812
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
IS - 20
ER -