Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Younghun Jung, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Ji Hyun Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

Original languageEnglish
Pages (from-to)5810-5812
Number of pages3
JournalThin Solid Films
Volume518
Issue number20
DOIs
Publication statusPublished - 2010 Aug 2

Fingerprint

electric contacts
Annealing
annealing
Temperature
temperature
Aluminum Oxide
Current voltage characteristics
Nickel
Sapphire
Temperature measurement
in situ measurement
sapphire
Degradation
nickel
degradation
electric potential

Keywords

  • Annealing
  • Non-polar GaN
  • Schottky barrier height

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Metals and Alloys
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces

Cite this

Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN. / Jung, Younghun; Mastro, Michael A.; Hite, Jennifer; Eddy, Charles R.; Kim, Ji Hyun.

In: Thin Solid Films, Vol. 518, No. 20, 02.08.2010, p. 5810-5812.

Research output: Contribution to journalArticle

Jung, Younghun ; Mastro, Michael A. ; Hite, Jennifer ; Eddy, Charles R. ; Kim, Ji Hyun. / Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN. In: Thin Solid Films. 2010 ; Vol. 518, No. 20. pp. 5810-5812.
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