Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Younghun Jung; Michael A. Mastro; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1016/j.tsf.2010.05.113

Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Younghun Jung, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

Original language	English
Pages (from-to)	5810-5812
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2010.05.113
Publication status	Published - 2010 Aug 2

Keywords

Annealing
Non-polar GaN
Schottky barrier height

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN",

abstract = "The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.",

keywords = "Annealing, Non-polar GaN, Schottky barrier height",

author = "Younghun Jung and Mastro, {Michael A.} and Jennifer Hite and Eddy, {Charles R.} and Jihyun Kim",

note = "Funding Information: Research at the Naval Research Lab is supported by the Office of Naval Research. Research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Programs funded by the Ministry of Education, Science and Technology of Korea.",

year = "2010",

month = aug,

day = "2",

doi = "10.1016/j.tsf.2010.05.113",

language = "English",

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journal = "Thin Solid Films",

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AU - Jung, Younghun

AU - Mastro, Michael A.

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Jihyun

N1 - Funding Information: Research at the Naval Research Lab is supported by the Office of Naval Research. Research at Korea University was supported by the Carbon Dioxide Reduction and Sequestration Center, one of the 21st Century Frontier R&D Programs funded by the Ministry of Education, Science and Technology of Korea.

PY - 2010/8/2

Y1 - 2010/8/2

N2 - The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

AB - The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

KW - Annealing

KW - Non-polar GaN

KW - Schottky barrier height

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DO - 10.1016/j.tsf.2010.05.113

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VL - 518

SP - 5810

EP - 5812

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

IS - 20

ER -

Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Abstract

Keywords

ASJC Scopus subject areas

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