Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Younghun Jung; Michael A. Mastro; Jennifer Hite; Charles R. Eddy; Jihyun Kim

doi:10.1016/j.tsf.2010.05.113

Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN

Younghun Jung, Michael A. Mastro, Jennifer Hite, Charles R. Eddy, Jihyun Kim

Department of Chemical and Biological Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

Original language	English
Pages (from-to)	5810-5812
Number of pages	3
Journal	Thin Solid Films
Volume	518
Issue number	20
DOIs	https://doi.org/10.1016/j.tsf.2010.05.113
Publication status	Published - 2010 Aug 2

Keywords

Annealing
Non-polar GaN
Schottky barrier height

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Post-annealing behavior of Ni/Au Schottky contact on non-polar a-plane GaN",

abstract = "The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.",

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AU - Jung, Younghun

AU - Mastro, Michael A.

AU - Hite, Jennifer

AU - Eddy, Charles R.

AU - Kim, Jihyun

PY - 2010/8/2

Y1 - 2010/8/2

N2 - The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

AB - The effects of annealing on the performance of Schottky devices on a-plane GaN/r-plane sapphire were investigated. The results show that the post-anneal Schottky barrier height (SBH) increased with increasing annealing temperature, reaching a peak increase of 43% at 500 °C. A further increase in the anneal temperature above 500 °C degraded the SBH. The ideality factor displayed a weak dependence on post-annealing temperature until rising dramatically at a post-annealing temperature of 600 °C. The degradation at 600 °C post-annealing temperature can be attributed to the formation of Nickel-Gallides. In-situ current-voltage characteristics obtained between 15 °C and 165 °C revealed that both the ideality factor and SBH were stable up to 165 °C with increasing in-situ measurement temperature.

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KW - Schottky barrier height

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