Post annealing effects on the electrical characteristics of pentacene thin film transistors on flexible substrates

Tae Yeon Oh, Shin Woo Jeong, Seongpil Chang, Jung ho Park, Jong Woo Kim, Kookhyun Choi, Hyeon Jun Ha, Bo Yeon Hwang, Byeong Kwon Ju

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

This work studies the effect of post annealing of pentacene on a flexible substrate through the examination of electrical properties and surface morphologies. It is confirmed that the best performance of devices is achieved when the post annealing temperature is 60 °C, since the grain size increases, which decrease grain boundaries caused charge transport limit. We can also confirmed the large threshold voltage shift of device annealed at 60 °C that means the lower trap density between channel and insulator interface. The device annealed at 60 °C exhibits a saturation mobility of 1.99 cm2/V · s, an on/off ratio of 1.87 × 10 4, and a subthreshold slope of 2.5 V/decade.

Original languageEnglish
Pages (from-to)3491-3494
Number of pages4
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number5
DOIs
Publication statusPublished - 2013 May 1

Keywords

  • Organic thin film transistor
  • Poly-4-vinylphenol
  • Polyethylene naphthalate
  • Post annealing effect

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Chemistry(all)
  • Materials Science(all)
  • Bioengineering
  • Biomedical Engineering

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