Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

G. Yang, A. E. Bolotnikov, P. M. Fochuk, Y. Cui, G. S. Camarda, A. Hossain, Kihyun Kim, J. Horace, B. McCall, R. Gul, O. V. Kopach, S. U. Egarievwe, R. B. James

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

Original languageEnglish
Pages (from-to)2912-2916
Number of pages5
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
Publication statusPublished - 2012 Oct 1
Externally publishedYes

Fingerprint

zinc tellurides
Radiation detectors
cadmium tellurides
radiation detectors
Cadmium
Zinc
Vapors
Annealing
vapors
Crystals
annealing
room temperature
crystals
inclusions
Temperature
electrical resistivity
crystal surfaces
Surface morphology
CdZnTe

Keywords

  • CZT
  • Post-growth annealing
  • Resistivity
  • Surface morphology
  • Te inclusions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Yang, G., Bolotnikov, A. E., Fochuk, P. M., Cui, Y., Camarda, G. S., Hossain, A., ... James, R. B. (2012). Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors. Journal of Electronic Materials, 41(10), 2912-2916. https://doi.org/10.1007/s11664-012-2013-x

Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors. / Yang, G.; Bolotnikov, A. E.; Fochuk, P. M.; Cui, Y.; Camarda, G. S.; Hossain, A.; Kim, Kihyun; Horace, J.; McCall, B.; Gul, R.; Kopach, O. V.; Egarievwe, S. U.; James, R. B.

In: Journal of Electronic Materials, Vol. 41, No. 10, 01.10.2012, p. 2912-2916.

Research output: Contribution to journalArticle

Yang, G, Bolotnikov, AE, Fochuk, PM, Cui, Y, Camarda, GS, Hossain, A, Kim, K, Horace, J, McCall, B, Gul, R, Kopach, OV, Egarievwe, SU & James, RB 2012, 'Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors', Journal of Electronic Materials, vol. 41, no. 10, pp. 2912-2916. https://doi.org/10.1007/s11664-012-2013-x
Yang, G. ; Bolotnikov, A. E. ; Fochuk, P. M. ; Cui, Y. ; Camarda, G. S. ; Hossain, A. ; Kim, Kihyun ; Horace, J. ; McCall, B. ; Gul, R. ; Kopach, O. V. ; Egarievwe, S. U. ; James, R. B. / Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors. In: Journal of Electronic Materials. 2012 ; Vol. 41, No. 10. pp. 2912-2916.
@article{a6f3520ac37046b499d9aa984bb51802,
title = "Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors",
abstract = "We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.",
keywords = "CZT, Post-growth annealing, Resistivity, Surface morphology, Te inclusions",
author = "G. Yang and Bolotnikov, {A. E.} and Fochuk, {P. M.} and Y. Cui and Camarda, {G. S.} and A. Hossain and Kihyun Kim and J. Horace and B. McCall and R. Gul and Kopach, {O. V.} and Egarievwe, {S. U.} and James, {R. B.}",
year = "2012",
month = "10",
day = "1",
doi = "10.1007/s11664-012-2013-x",
language = "English",
volume = "41",
pages = "2912--2916",
journal = "Journal of Electronic Materials",
issn = "0361-5235",
publisher = "Springer New York",
number = "10",

}

TY - JOUR

T1 - Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

AU - Yang, G.

AU - Bolotnikov, A. E.

AU - Fochuk, P. M.

AU - Cui, Y.

AU - Camarda, G. S.

AU - Hossain, A.

AU - Kim, Kihyun

AU - Horace, J.

AU - McCall, B.

AU - Gul, R.

AU - Kopach, O. V.

AU - Egarievwe, S. U.

AU - James, R. B.

PY - 2012/10/1

Y1 - 2012/10/1

N2 - We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

AB - We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

KW - CZT

KW - Post-growth annealing

KW - Resistivity

KW - Surface morphology

KW - Te inclusions

UR - http://www.scopus.com/inward/record.url?scp=84868551870&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84868551870&partnerID=8YFLogxK

U2 - 10.1007/s11664-012-2013-x

DO - 10.1007/s11664-012-2013-x

M3 - Article

AN - SCOPUS:84868551870

VL - 41

SP - 2912

EP - 2916

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

SN - 0361-5235

IS - 10

ER -