Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

G. Yang, A. E. Bolotnikov, P. M. Fochuk, Y. Cui, G. S. Camarda, A. Hossain, K. H. Kim, J. Horace, B. McCall, R. Gul, O. V. Kopach, S. U. Egarievwe, R. B. James

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

Original languageEnglish
Pages (from-to)2912-2916
Number of pages5
JournalJournal of Electronic Materials
Volume41
Issue number10
DOIs
Publication statusPublished - 2012 Oct

Keywords

  • CZT
  • Post-growth annealing
  • Resistivity
  • Surface morphology
  • Te inclusions

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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