Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

G. Yang; A. E. Bolotnikov; P. M. Fochuk; Y. Cui; G. S. Camarda; A. Hossain; K. H. Kim; J. Horace; B. McCall; R. Gul; O. V. Kopach; S. U. Egarievwe; R. B. James

doi:10.1007/s11664-012-2013-x

Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

G. Yang, A. E. Bolotnikov, P. M. Fochuk, Y. Cui, G. S. Camarda, A. Hossain, K. H. Kim, J. Horace, B. McCall, R. Gul, O. V. Kopach, S. U. Egarievwe, R. B. James

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

Original language	English
Pages (from-to)	2912-2916
Number of pages	5
Journal	Journal of Electronic Materials
Volume	41
Issue number	10
DOIs	https://doi.org/10.1007/s11664-012-2013-x
Publication status	Published - 2012 Oct
Externally published	Yes

Keywords

CZT
Post-growth annealing
Resistivity
Surface morphology
Te inclusions

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1007/s11664-012-2013-x

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Yang, G., Bolotnikov, A. E., Fochuk, P. M., Cui, Y., Camarda, G. S., Hossain, A., Kim, K. H., Horace, J., McCall, B., Gul, R., Kopach, O. V., Egarievwe, S. U., & James, R. B. (2012). Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors. Journal of Electronic Materials, 41(10), 2912-2916. https://doi.org/10.1007/s11664-012-2013-x

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title = "Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors",

abstract = "We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.",

keywords = "CZT, Post-growth annealing, Resistivity, Surface morphology, Te inclusions",

author = "G. Yang and Bolotnikov, {A. E.} and Fochuk, {P. M.} and Y. Cui and Camarda, {G. S.} and A. Hossain and Kim, {K. H.} and J. Horace and B. McCall and R. Gul and Kopach, {O. V.} and Egarievwe, {S. U.} and James, {R. B.}",

note = "Funding Information: This work was supported by US Department of Energy, Office of Nonproliferation and Verification Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the US Department of Energy.",

year = "2012",

month = oct,

doi = "10.1007/s11664-012-2013-x",

language = "English",

volume = "41",

pages = "2912--2916",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "10",

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TY - JOUR

T1 - Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

AU - Yang, G.

AU - Bolotnikov, A. E.

AU - Fochuk, P. M.

AU - Cui, Y.

AU - Camarda, G. S.

AU - Hossain, A.

AU - Kim, K. H.

AU - Horace, J.

AU - McCall, B.

AU - Gul, R.

AU - Kopach, O. V.

AU - Egarievwe, S. U.

AU - James, R. B.

N1 - Funding Information: This work was supported by US Department of Energy, Office of Nonproliferation and Verification Research and Development, NA-22. The manuscript has been authored by Brookhaven Science Associates, LLC under Contract No. DE-AC02-98CH1-886 with the US Department of Energy.

PY - 2012/10

Y1 - 2012/10

N2 - We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

AB - We investigated the effects of post-growth annealing on cadmium zinc telluride crystals intended for use as room-temperature radiation detectors. Annealing under Cd vapor effectively eliminated Te inclusions. The material's resistivity was lowered, and loss of Zn component was observed. Annealing under Cd + Zn vapors similarly removed Te inclusions. Furthermore, after exposure to the two vapors, we noted a change in the crystal surface morphology, i.e., formation of patterns of parallel lines. In contrast to annealing under Cd vapor alone, high resistivity was maintained after suitably controlling the Cd and Zn pressures.

KW - CZT

KW - Post-growth annealing

KW - Resistivity

KW - Surface morphology

KW - Te inclusions

UR - http://www.scopus.com/inward/record.url?scp=84868551870&partnerID=8YFLogxK

U2 - 10.1007/s11664-012-2013-x

DO - 10.1007/s11664-012-2013-x

M3 - Article

AN - SCOPUS:84868551870

SN - 0361-5235

VL - 41

SP - 2912

EP - 2916

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 10

ER -

Post-growth annealing of cadmium zinc telluride crystals for room-temperature radiation detectors

Abstract

Keywords

ASJC Scopus subject areas

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