Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

G. Yang, A. E. Bolotnikov, P. M. Fochuk, O. Kopach, J. Franc, E. Belas, Kihyun Kim, G. S. Camarda, A. Hossain, Y. Cui, A. L. Adams, A. Radja, R. Pinder, R. B. James

Research output: Contribution to journalArticle

32 Citations (Scopus)

Abstract

Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.

Original languageEnglish
Pages (from-to)16-20
Number of pages5
JournalJournal of Crystal Growth
Volume379
DOIs
Publication statusPublished - 2013 Jan 1
Externally publishedYes

Fingerprint

Gamma rays
gamma rays
Annealing
Detectors
X rays
annealing
detectors
room temperature
x rays
Temperature
grade
Vapors
inclusions
vapors
CdZnTe
Hot Temperature
electrical resistivity
Pressure control
Thermal gradients
temperature gradients

Keywords

  • A1. Defect
  • A1. Radiation detectors
  • B1. Cadmium compounds
  • B2 Semi-conducting II-VI materials
  • B2. CdZnTe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Yang, G., Bolotnikov, A. E., Fochuk, P. M., Kopach, O., Franc, J., Belas, E., ... James, R. B. (2013). Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors. Journal of Crystal Growth, 379, 16-20. https://doi.org/10.1016/j.jcrysgro.2012.11.041

Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors. / Yang, G.; Bolotnikov, A. E.; Fochuk, P. M.; Kopach, O.; Franc, J.; Belas, E.; Kim, Kihyun; Camarda, G. S.; Hossain, A.; Cui, Y.; Adams, A. L.; Radja, A.; Pinder, R.; James, R. B.

In: Journal of Crystal Growth, Vol. 379, 01.01.2013, p. 16-20.

Research output: Contribution to journalArticle

Yang, G, Bolotnikov, AE, Fochuk, PM, Kopach, O, Franc, J, Belas, E, Kim, K, Camarda, GS, Hossain, A, Cui, Y, Adams, AL, Radja, A, Pinder, R & James, RB 2013, 'Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors', Journal of Crystal Growth, vol. 379, pp. 16-20. https://doi.org/10.1016/j.jcrysgro.2012.11.041
Yang, G. ; Bolotnikov, A. E. ; Fochuk, P. M. ; Kopach, O. ; Franc, J. ; Belas, E. ; Kim, Kihyun ; Camarda, G. S. ; Hossain, A. ; Cui, Y. ; Adams, A. L. ; Radja, A. ; Pinder, R. ; James, R. B. / Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors. In: Journal of Crystal Growth. 2013 ; Vol. 379. pp. 16-20.
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