Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors

G. Yang, A. E. Bolotnikov, P. M. Fochuk, O. Kopach, J. Franc, E. Belas, K. H. Kim, G. S. Camarda, A. Hossain, Y. Cui, A. L. Adams, A. Radja, R. Pinder, R. B. James

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

Post-growth annealing is a potentially promising method of improving the properties of CZT for fabricating room-temperature X-ray and gamma-ray detectors. In this paper, we summarize some of our recent research on annealing detector-grade CZT crystals. Our results show that annealing in a Cd vapor effectively removes Te inclusions from CZT. The migration of Te inclusions was also observed for annealing in a temperature-gradient field. We recorded a loss of resistivity of the detector-grade CZT after annealing in a Cd vapor. The underlying mechanism of this loss was discussed, and solutions including two-step annealing (Cd annealing followed by Te annealing) and one-step annealing with Cd and Zn pressure control were proposed to maintain high resistivity.

Original languageEnglish
Pages (from-to)16-20
Number of pages5
JournalJournal of Crystal Growth
Volume379
DOIs
Publication statusPublished - 2013
Externally publishedYes

Keywords

  • A1. Defect
  • A1. Radiation detectors
  • B1. Cadmium compounds
  • B2 Semi-conducting II-VI materials
  • B2. CdZnTe

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Yang, G., Bolotnikov, A. E., Fochuk, P. M., Kopach, O., Franc, J., Belas, E., Kim, K. H., Camarda, G. S., Hossain, A., Cui, Y., Adams, A. L., Radja, A., Pinder, R., & James, R. B. (2013). Post-growth thermal annealing study of CdZnTe for developing room-temperature X-ray and gamma-ray detectors. Journal of Crystal Growth, 379, 16-20. https://doi.org/10.1016/j.jcrysgro.2012.11.041